Generation of a boron ion beam in a modified ion source for semiconductor applications

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

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Ion sources for energy extremes of ion implantation (invited)

Hershcovitch

Johnson

Batalin

et al. 2008

Review of Scientific Instruments

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Side extraction duoPIGatron-type ion source

Gushenets¹,

Окс²,

Hershcovitch³

et al. 2008

Review of Scientific Instruments

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. Abstract -We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, in such the ion can be extracted from side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1x40 mm. The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has stable arc, uniformly bright illumination, and dense plasma. The present work describes some of preliminary operating parameters of the ion source using Argon, BF3. The total unanalyzed beam currents are 23 mA using Ar at an arc current 5 A and 13 mA using BF3 gas at an arc current 6 A.

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Experimental comparison of time-of-flight mass analysis with magnetic mass analysis

Gushenets

Бугаев

Окс

et al. 2008

Review of Scientific Instruments

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A series of experiments was carried out in which both a magnetic analyzer (mass separator) and a time-of-flight (TOF) spectrometer were used for ion charge/mass spectral analysis of the ion beam formed by a dc Bernas ion source made for semiconductor implantation. The TOF analyzer was a detachable device that provides rapid analysis of charge-to-mass composition of moderate energy ion beams. The magnetic analyzer was a massive device using a 90 degrees -sector bending magnet with radius of the central orbit of 35 cm. Comparison of these two methods for measuring ion beam composition shows good agreement.

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Generation of a boron ion beam in a modified ion source for semiconductor applications

Cited by 6 publications

References 5 publications

Ion sources for energy extremes of ion implantation (invited)

Ion sources for energy extremes of ion implantation (invited)

Side extraction duoPIGatron-type ion source

Experimental comparison of time-of-flight mass analysis with magnetic mass analysis

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