(Invited) Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy

Shiojima, Kenji

doi:10.1149/10404.0069ecst

Cited by 3 publications

(2 citation statements)

References 20 publications

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“…Early on, they demonstrated mapping of Schottky contacts in Si and GaAs using an infrared laser as a light source. More recently, as wide bandgap semiconductor materials have been actively studied for high-power RF and switching electronic devices, we have reconfigured these SIPMs using visible lasers (30,31).…”

Section: Two-dimensional Characterization Using Our Scanning Internal...mentioning

confidence: 99%

(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days

Shiojima

2023

ECS Trans.

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This paper reviews innovation of metal/GaN contacts from the aspects of crystal quality, process technique, and basic understanding of the electrical characteristics. Five topics; (i) thermal degradation of refractory metal contacts, (ii) correlation between dislocations and electrical characteristics, (iii) exploring ideal metal/GaN interfaces by cleaving, surface treatment, and post metallization annealing, (iv) large-barrier p-GaN Schottky contacts by reducing Mg doping level, (v) two-dimensional characterization using our original method: scanning internal photoemission microscopy are described.

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Section: Two-dimensional Characterization Using Our Scanning Internal...mentioning

confidence: 99%

(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days

Shiojima

2023

ECS Trans.

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“…From the aspect of measurement methods, we used photoelectrical methods, photoresponse (PR), and scanning internal photoemission microscopy (SIPM), in addition to conventional current-voltage (I-V ) and capacitance-voltage (C-V ) methods. Especially by using SIPM, which we originally developed for non-destructive two-dimensional characterization of metal/semiconductor (M/S) interfaces covered with a thick metal, 18,19) there was an advantage in investigating inhomogeneity over the electrode in photocurrent and Schottky barrier height (qf B ) images. Actually, we have demonstrated SIPM for lightly doped SiC Schottky contacts (n-4H-SiC (n = 10 16 cm −3 ) and p-6H-SiC (p < 10 15 cm −3 )) with excellent I-V characteristics to visualize typical crystal defects, such as stacking faults, downfalls, and pits in the vicinity of the SiC surfaces.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical characterization of heavily doped p-SiC Schottky contacts

Imabayashi,

Sawazaki,

Yoshimura

et al. 2024

Jpn. J. Appl. Phys.

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Availability of the photoelectrical characterization for heavily-Al-doped p-SiC Schottky contacts was clarified. We conducted a systematic study of four samples with different Al doping concentrations from 1×1018 to 5×1019 cm-3. Although the current-voltage (I-V) characteristics had lost rectification, reasonable Schottky barrier height (qφ B) values were obtained up to 1×1019 cm-3 by the capacitance-voltage, photoresponse and scanning internal photoemission microscopy (SIPM) measurements. In the two-dimensional characterization by SIPM, large photocurrent spots corresponding with low qφ B were observed in an average density of 103 to 104 cm-2. However, Except for the spots, a high uniformity of about 2 meV standard deviation was obtained for qφ B over the entire observed electrodes. These results indicate that SIPM is able to characterize the inhomogeneity of heavily-doped p-SiC contacts with very leaky I-V characteristics.

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Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy

Imabayashi,

Yoshimura,

Horikiri

et al. 2024

Physica Status Solidi (b)

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The two‐dimensional characterization of the Au/Ni/thin p+‐GaN/n−‐GaN structure, which is a part of a junction barrier Schottky structure, is demonstrated by scanning internal photoemission microscopy (SIPM) method. In the SIPM photoyield image using a blue laser, small photocurrents based on the internal photoemission effect by electron injection across the metal/semiconductor interface (from Ni to GaN) are detected in the center of the electrode. On the periphery, large photocurrents in the opposite direction are detected. These currents are caused by the hole injection from Ni into p+‐GaN layer and the electrical field in the laterally extended depletion layer at the edge. By using a violet laser, large photocurrents based on the fundamental absorption generated in the depletion layer of the n−‐GaN layer are uniformly detected over the electrode. It is conformed that SIPM can be available for quasi‐three‐dimensional characterization of this structure.

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(Invited) Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy

Cited by 3 publications

References 20 publications

(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days

(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days

Photoelectrical characterization of heavily doped p-SiC Schottky contacts

Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy

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