(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days

Abstract

This paper reviews innovation of metal/GaN contacts from the aspects of crystal quality, process technique, and basic understanding of the electrical characteristics. Five topics; (i) thermal degradation of refractory metal contacts, (ii) correlation between dislocations and electrical characteristics, (iii) exploring ideal metal/GaN interfaces by cleaving, surface treatment, and post metallization annealing, (iv) large-barrier p-GaN Schottky contacts by reducing Mg doping level, (v) two-dimensional characterization using our original method: scanning internal photoemission microscopy are described.