(Invited) Toward GeSn Lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature

Mathews, Jay; Li, Zairui; Zhao, Yun; Gallagher, James; Agha, Imad; Menéndez, José; Kouvetakis, John

doi:10.1149/07508.0163ecst

Cited by 11 publications

(2 citation statements)

References 32 publications

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“…Electronic-photonic integrated circuits call upon several optical components, such as lasers [1], photodetectors [2,3], waveguides [4,5] and modulators [6] which must be compatible with current Si metal-oxyde-semiconductor technologies. Silicon, germanium and tin based alloys are materials of choice in such devices [7].…”

Section: Introductionmentioning

confidence: 99%

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Aubin¹,

Hartmann²,

Gassenq³

et al. 2017

Semicond. Sci. Technol.

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Two approaches have been compared for the low temperature epitaxy of thick, partially relaxed GeSn layers on top of Ge strain relaxed buffers. The benefit of using step-graded instead of constant composition layers when targeting really high Sn contents (16%, here) was conclusively demonstrated. Digermane (Ge 2 H 6 ) and tin-tetrachloride (SnCl 4 ) were used as Ge and Sn precursors, respectively. The growth pressure (100 Torr) and the F(Ge 2 H 6 )/F(SnCl 4 ) mass-flow ratio being constant, it was through a temperature lowering that the Sn concentration in the graded structure was increased. X-ray diffraction, atomic force microscopy and transmission electron microscopy were used to gain access to the Sn concentration, the strain state, the surface morphology and thicknesses of the heterostructures. Using a step-graded approach allowed us to gradually relax the strain in the GeSn layers. It helped us obtain high crystalline quality and avoid Sn segregation/precipitation for high Sn contents.

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Section: Introductionmentioning

confidence: 99%

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Aubin¹,

Hartmann²,

Gassenq³

et al. 2017

Semicond. Sci. Technol.

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“…The bandgap of such alloys becomes direct above 8-9% atomic of Sn (for a relaxed material), and can be tuned thanks to Sn and Si concentration and elastic strain variations [1]. It therefore opens up possibilities in the mid infra-red [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses

Castioni

Henry

Casiez

et al. 2022

Journal of Applied Physics

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The structural properties of CVD-grown (Si)GeSn heterostructures were assessed thanks to scanning transmission electron microscopy at the nanometer scale. Quantitative energy dispersive x-ray (EDX) spectroscopy together with precession electron diffraction and geometrical phase analysis (GPA) were performed to probe the chemical and structural properties of the different layers. Results presented in this paper demonstrated the advantages of a multilayer structure, with successive layers grown at decreasing temperatures in order to gradually accommodate the in-plane lattice parameter and incorporate more and more Sn into the stack. It was shown how the GeSn emissive layer could be manufactured with low plastic deformation and a high relaxation rate, necessary for better light emission performances. SiGeSn alloys used as confinement barriers around the emissive layer were also investigated. For such thin layers, we showed the importance of the starting lattice parameter (SLP) prior to the growth on their composition. Indeed, higher SLPs resulted, for the very same process conditions, into higher Sn contents and lower Si contents. The interest in combining EDX, which was accurate enough to detect slight chemical concentration variations, and GPA, for local strain analyses, was clearly demonstrated. Present results will be very useful to predict and control the bandgap and structural quality of (Si)GeSn materials and, in turn, device properties.

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New Materials Used in IC

Fu,

Duan,

2023

Handbook of Integrated Circuit Industry

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(Invited) Toward GeSn Lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature

Cited by 11 publications

References 32 publications

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses

New Materials Used in IC

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