Abstract:This paper discusses the simulation of the charge pumping (CP) curves of conventional MOSFETs with a thick SiO2 dielectric. After recalling the essential of the model derived to that aim, the most salient features this model implies are pointed out. Then, starting from the results published in (1, 2), the trap characteristics used in these papers are discussed. The simulation of such curves with a single trap type is presented before discussing hole and electron emission times and, as reported here for the fir… Show more
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