Abstract:The expected performance of GaN and SiC based power devices far exceeds that of Si power transistors, but the gap between the expected and achieved performance is much larger for GaN transistors. In this paper, we discuss new approaches for shrinking the performance gap for GaN power devices. They include using the quantum well channel designs that lead to the electron wave function penetration into wide band gap cladding layers with the commensurate increase in the breakdown voltage while keeping the advantag… Show more
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