Drawing upon a collection of electron transport results, coupled with a variety of other material parameters, we set expectations on the upper limits to device performance of zinc blende boron-nitride-based electron devices. We examine how the device performance varies with the device length-scale, noting that a diversity of physical regimes are experienced as the device length-scale reduces from that corresponding to a long electron device, i.e., 100 μm, to the sub-micron level. Results corresponding to zinc blende boron nitride are contrasted with those associated with germanium, silicon, gallium arsenide, the 4H-phase of silicon carbide, wurtzite gallium nitride, and diamond. The electron device performance metrics that we focus upon for the purposes of this analysis include the effective mobility, accounting for the transition between the ballistic and the collision-dominated electron transport regimes, and the cutoff frequency.
A multiple input multiple output (MIMO) power line communication (PLC) model for industrial facilities was developed that uses the physics of a bottom-up model but can be calibrated like top-down models. The PLC model considers 4-conductor cables (three-phase conductors and a ground conductor) and has several load types, including motor loads. The model is calibrated to data using mean field variational inference with a sensitivity analysis to reduce the parameter space. The results show that the inference method can accurately identify many of the model parameters, and the model is accurate even when the network is modified.
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