(Invited)<i />Laser Annealing in CMOS Manufacturing

Gaidai, Oleg; Jagannathan, H.

doi:10.1149/08506.0011ecst

Cited by 18 publications
(9 citation statements)

References 22 publications
(27 reference statements)

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“…The thermal stability of the activated As atoms has been assessed, assuming the typical BEOL anneal conditions (100 to 420 °C for 10 m to 1 h with furnace anneal, [40][41][42][43] whereas ~1300 °C for ~10 -7 to ~10 -4 s with LA). 30,43 In Ref. 24, the As deactivation in Si is discussed, starting from an active level (~1 × 10 21 at./cm 3 ) similar to our µs UV-LA SPER cases.…”

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confidence: 68%

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Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
Tabata
¹
,
Rozé
²
,
Thuries
³

et al. 2022
Appl. Phys. Express
5
1
3
0
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Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (µs) strongly limit the vertical heat diffusion. In this work, µs UV-LA solid phase epitaxial regrowth (SPER) demonstrated an active carrier concentration surpassing 1 × 1021 at./cm3 in an arsenic ion-implanted silicon-on-insulator substrate. After the subsequent ns UV-LA known for improving CMOS interconnect, only a slight (⁓5%) sheet resistance increase was observed. The results open a possibility to integrate UV-LA at different stages of 3D-stacked CMOS.
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mentioning
confidence: 68%

“…In fact, LA has already been successfully integrated into the back end of lines (BEOL), outperforming conventional furnace anneals. [30][31][32] Silicon-on-insulator (SOI) wafers were used as the substrate. The top (100) silicon (Si) layer thickness was 70 nm, whereas that of the buried Si dioxide (SiO2) layer was 145 nm.…”

mentioning
confidence: 99%

Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
Tabata
¹
,
Rozé
²
,
Thuries
³

et al. 2022
Appl. Phys. Express
5
1
3
0
View full text Add to dashboard Cite

Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (µs) strongly limit the vertical heat diffusion. In this work, µs UV-LA solid phase epitaxial regrowth (SPER) demonstrated an active carrier concentration surpassing 1 × 1021 at./cm3 in an arsenic ion-implanted silicon-on-insulator substrate. After the subsequent ns UV-LA known for improving CMOS interconnect, only a slight (⁓5%) sheet resistance increase was observed. The results open a possibility to integrate UV-LA at different stages of 3D-stacked CMOS.

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“…Millisecond lasers are expected to lead to similar effects and have been widely used in semiconductor industry. [ 47 ]…”

Section: Resultsmentioning
confidence: 99%

Phase Selection in Mn–Si Alloys by Fast Solid‐State Reaction with Enhanced Skyrmion Stability
Li
¹
,
Xie
²
,
Yuan
³

et al. 2021
Adv Funct Materials
12
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14
0
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B20‐type transition‐metal silicides or germanides are noncentrosymmetric materials hosting magnetic skyrmions, which are promising information carriers in spintronic devices. The prerequisite is to prepare thin films on technology‐relevant substrates with magnetic skyrmions stabilized at a broad temperature and magnetic‐field working window. A canonical example is the B20‐MnSi film grown on Si substrates. However, the as‐yet unavoidable contamination with MnSi1.7 occurs due to the lower nucleation temperature of this phase. In this work, a simple and efficient method to overcome this problem and prepare single‐phase MnSi films on Si substrates is reported. It is based on the millisecond reaction between metallic Mn and Si using flash‐lamp annealing (FLA). By controlling the FLA energy density, single‐phase MnSi or MnSi1.7 or their mixture can be grown at will. Compared with bulk MnSi, the prepared MnSi films show an increased Curie temperature of up to 41 K. In particular, the magnetic skyrmions are stable over a much wider temperature and magnetic‐field range than reported previously. The results constitute a novel phase selection approach for alloys and can help to enhance specific functional properties, such as the stability of magnetic skyrmions.

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“…Its expected benefit is to enable a bamboo-like structure (i.e., reduction of electron scattering spots) in scaled BEOL lines thanks to the capability of processing wafers at a higher temperature (possibly melting Cu but not Ru) than in typical BEOL furnace annealing (e.g., less than 420 • C up to 1 h [71][72][73][74]). As shown in Figures 13 and 14, ns LA (non-UV) indeed shows such a potential [75,76].…”

Section: Beol Applicationsmentioning
confidence: 63%

Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices
Tabata
¹
,
Rozé
²
,
Thuries
³

et al. 2022
Electronics
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0
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The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, while alleviating difficulties encountered in traditional planar scaling. This new device architecture, in addition to the efforts required for extracting the best material properties, imposes a challenge of reducing the thermal budget of processes to be applied everywhere in CMOS devices, so that conventional processes must be replaced without any compromise to device performance. Ultra-violet laser annealing (UV-LA) is then of prime importance to address such a requirement. First, the strongly limited absorption of UV light into materials allows surface-localized heat source generation. Second, the process timescale typically ranging from nanoseconds (ns) to microseconds (μs) efficiently restricts the heat diffusion in the vertical direction. In a given 3D stack, these specific features allow the actual process temperature to be elevated in the top-tier layer without introducing any drawback in the bottom-tier one. In addition, short-timescale UV-LA may have some advantages in materials engineering, enabling the nonequilibrium control of certain phenomenon such as crystallization, dopant activation, and diffusion. This paper reviews recent progress reported about the application of short-timescale UV-LA to different stages of CMOS integration, highlighting its potential of being a key enabler for next generation 3D-integrated CMOS devices.

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(Invited)Laser Annealing in CMOS Manufacturing

Cited by 18 publications

References 22 publications

Microsecond non-melt UV laser annealing for future 3D-stacked CMOS

Microsecond non-melt UV laser annealing for future 3D-stacked CMOS

Phase Selection in Mn–Si Alloys by Fast Solid‐State Reaction with Enhanced Skyrmion Stability

Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices

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