Abstract:In this paper, we first review the overall trends for advanced CMOS devices in terms of scalability and performance. To carry on Moore’s law, devices need to be scaled from node to node. To enable this scaling, taller, more rectangular FinFETs with narrower body width at scaled pitches has been demonstrated. However this leads to several key process and integration challenges such as Fin integrity, capacitance increase, channel mobility, sub-fin isolation, and sidewall doping as well as contact resistance redu… Show more
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