(Invited) Advances in Silicon Crystal Properties

Abstract

The defect situations as they are presented in different categories of silicon material are briefly described. It is stated that oxygen or carbon are predominant factors in forming localized defects. After a brief introduction into lattice kinetics of gettering, different aspects of defect engineering are discussed. For dislocation-free crystals, this article mainly concentrates on the kinetics of two types of defects: oxygen swirl and haze. Substantial efforts to prevent their formation in the surface region of the wafer by applying either internal or external gettering methods have been made more recently. The special nature of polycrystal-line silicon solidified from the molten state, finally represents a different system of internal gettering.

Two‐Step Thermal Anneal and Its Application to a CCD Sensor and CMOS LSI

“…However, so-called hard damages which generate dislocations and are represented by D in Fig. 17 were not eliminated by the high h e a t -t r e a t m e n t This hard damage is also effective for the gettering, however, they easily Cause thermal slip or wafer warpage when a large number of hard damages are induced for effective gettering (32). Therefore, it is assumed that IG is a better technique than the back surface damage by sandblasting for the CMOS process.…”

Metal Decorated Defects in Heat‐Treated Silicon Wafers

“…"Haze" refers to dense arrays of microdefects in heat-treated silicon wafers (1)(2)(3). These defects appear as shallow pits when preferentially etched and are sometimes termed saucer pits or S-pits.…”