Investigations on preferentially oriented Al-doped ZnO films developed using rf magnetron sputtering

Poddar, Nalin Prashant; Mukherjee, Sanat Kumar

doi:10.1007/s10854-018-0320-6

Cited by 17 publications

(2 citation statements)

References 60 publications

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“…In the substitute group, doped ZnO is considered to be the utmost promising candidate for its low cost, non-toxicity, high optical bandgap. ZnO doped with Al, Ga, B, In, and so forth show very similar electrical and optical properties to conventional ITO. ,, Al-doped ZnO thin films (AZO), being low-cost, are extensively used in a wide range of photonic devices such as flat panel display, solar cell, LED, and so forth. − Various vacuum-assisted deposition processes such as sputtering, pulsed laser deposition, electron beam evaporation, and so forth as well as non-vacuum-aided technique such as spray pyrolysis, chemical vapor deposition, sol–gel, and so forth are reported aplenty for the deposition AZO film. However, all these techniques require elevated temperature at some stage to have high quality AZO film with a higher figure of merit (FOM) value.…”

Section: Introductionmentioning

confidence: 99%

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Pal

Basak

2023

J. Phys. Chem. C

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In this study, we have demonstrated the interaction of an ultrathin Zn surface passivation layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly improved electrical transport properties. The resistivity of the AZO film increases monotonically with time in ambient conditions (from 0.02 to 0.33 Ω·cm), while overlaying a 4 nm Zn layer on AZO film stabilizes the resistivity to a value of 4.56 × 10–3 Ω·cm, which decreases to a value of 2.40 × 10–3 Ω·cm for a 5.3 nm Zn overlayer. The remarkable enhancement in the electrical stability and the conductivity value is attributed to a probable diffusion of Zn species into the AZO films, passivating Zn vacancy (VZn) and forming Zn interstitial (Zni), Zni-VO donor complexes supported by RT Raman and X-ray photoelectron spectroscopy studies. Temperature-dependent resistivity measurement reveals the semiconducting behavior of the AZO films with 4 and 6 nm Zn overlayer, where the transport process is governed by thermally activated band conduction at and below RT (up to ∼247 K), followed by nearest-neighbor hopping and Mott variable range hopping mechanisms as the temperature goes down. The 5.3 nm Zn-coated AZO film shows metallic behavior at RT and a metal to semiconductor transition ∼220 K deviating from the Boltzmann conduction process due to electron–electron interaction phenomena.

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Section: Introductionmentioning

confidence: 99%

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Pal

Basak

2023

J. Phys. Chem. C

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“…such as plastic deformation for grains refinement, however, it has strict requirements for the size of the samples. Second phase particles also could be introduced for grains refinement, and they have the pinning effect at grain boundaries, preventing their migration, thereby enhancing the creep resistance and strength of magnesium alloys [1][2][3][4] .…”

Section: Introductionmentioning

confidence: 99%

Phase field simulating grain refinement of magnesium alloy by thin strip second phase particles

Zhao,

Wu,

Xiong

2023

J. Phys.: Conf. Ser.

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The study has investigated the grain growth of AZ31 magnesium alloy matrix with fine strip second phase particles, by the phase field model in the real space and time, through introducing free energy equation, and compared with the simulated results containing spherical particles. The results showed that both the thin strip ellipsoidal particles and the cuboid particles have grain refinement effect on the microstructure, moreover, when the content of the second phase particles is the same, the refining effect of thin strip particles could be better than the spherical particles on the matrix microstructure. This study provides the real scale phase field models to research the grain refinement by second phase particles.

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Influence of Al content and annealing atmosphere on optoelectronic characteristics of Al:ZnO thin films

et al. 2020

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Investigations on preferentially oriented Al-doped ZnO films developed using rf magnetron sputtering

Cited by 17 publications

References 60 publications

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Phase field simulating grain refinement of magnesium alloy by thin strip second phase particles

Influence of Al content and annealing atmosphere on optoelectronic characteristics of Al:ZnO thin films

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