Influence of Al content and annealing atmosphere on optoelectronic characteristics of Al:ZnO thin films

Chen, Feng-Kuan; Tsai, Du-Cheng; Chang, Zue-Chin; Chen, Erh-Chiang; Shieu, Fuh‐Sheng

doi:10.1007/s00339-020-03835-5

Cited by 6 publications

(2 citation statements)

References 37 publications

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“…Due to the formation of V Zn ″, there is a low activation energy that can cause an increase in V Zn ″. This, in turn, can lead to significant lattice distortion and a reduction in carrier mobility, resulting in an increase in resistance [18]. Furthermore, it was observed that the resistance of all samples exhibited significant voltage dependence and unstable behavior.…”

Section: Mcp Bulk Resistance Testmentioning

confidence: 99%

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

Zhu,

Xu,

et al. 2023

Mater. Res. Express

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AZO(ZnO/Al2O3) conductive films were deposited in the microchannel of microchannel plate (MCP) by atomic layer deposition (ALD). The prepared films were characterized, including analysis of the thickness and composition uniformity of AZO films. The MCP bulk resistance was also measured, and the effect of annealing treatment on bulk resistance was investigated. The results suggest that the use of trimethylaluminum in the preparation of AZO composite film within the microchannel of MCP leads to corrosion of ZnO, resulting in non-uniformity in film thickness and incorrect composition of the film. The problem was resolved by increasing the pulse time of trimethylaluminum to 500 ms, resulting in the successful preparation of an AZO film with a uniform thickness and composition in the microchannel. After annealing, the bulk resistance of MCP increases while the variation of bulk resistance with voltage decreases. Specifically, the bulk resistance of the MCP having a ZnO/Al2O3 ratio of 7/2 only experiences changes of the same order of magnitude (~108 Ω) after undergoing a 60-minute annealing process in N2 at 300 ℃, thus satisfying the requirements of MCP.

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Section: Mcp Bulk Resistance Testmentioning

confidence: 99%

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

Zhu,

Xu,

et al. 2023

Mater. Res. Express

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show abstract

“…This can be ascribed to high sensitivity of the properties of USPdeposited AZO thin films to processing parameters such as extrinsic doping concentration, deposition atmosphere and temperature, precursor type, molarity of the spraying solution, carrier gas type and pressure, residual contaminations, etc. Therefore, an additional post-deposition annealing step was almost always applied to improve the crystallinity and to tailor the defect chemistry of AZO thin films to obtain suitable optical and electrical properties [26][27][28][29]. However, this step generally includes holding the sample at a moderate temperature (300-600 °C) for a certain time under high purity inert/reducing gas atmosphere or vacuum, which requires additional cost to achieve a coating with high figure of merit (FOM) value.…”

Section: Introductionmentioning

confidence: 99%

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Tönbül

Can

Őztürk

et al. 2021

J Sol-Gel Sci Technol

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Double layer glass/fluorine-doped tin oxide (FTO)/aluminum-doped zinc oxide (AZO) multifunctional thin films were achieved via ultrasonic spray pyrolysis (USP) method without employing a post-deposition annealing. Transparent heater and near-infrared heat reflection behaviors were investigated. The samples were characterized in terms of their structural, morphological, optical, and electrical properties. The top AZO layer exhibited a polycrystalline structure without any preferred orientation. The double layer structure showed very high average transmittance (87%, 400-700 nm) in the visible and reflectance (55%, 2500 nm) in the near-infrared, regions. In addition, the sheet resistance and resistivity of the film were measured as 14.85 (Ω sq −1 ) and 1.78 × 10 −3 (Ω cm), respectively. The saturation temperature, response time, surface temperature uniformity, areal power density, and thermal resistance values were found to be 111 °C, 174 s, 11.42%, 0.299 W/cm 2 , and 282.8 °C cm 2 W −1 for a sample with an active area of 31.5 cm 2 and input voltage of 9 V. In addition, dryice cooled samples (−25 °C) showed impressive deicing performance depending on the input power. In case of 12 V, all ice was defrosted, and water droplets were evaporated within 2 min and 10 s. During this process, a heating rate of ⁓43 °C/min was achieved.

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Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

et al. 2021

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Influence of Al content and annealing atmosphere on optoelectronic characteristics of Al:ZnO thin films

Cited by 6 publications

References 37 publications

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

Solution processed glass/fluorine-doped tin oxide/aluminum-doped zinc oxide double layer thin films for transparent heater and near-infrared reflecting applications

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

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