Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

Tsai, Du‐Cheng; Chen, Feng-Kuan; Chang, Zue-Chin; Kuo, Bing-Hau; Chen, Erh-Chiang; Huang, Yen-Lin; Shieu, Fuh‐Sheng

doi:10.1007/s00339-021-04723-2

Cited by 1 publication

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“…The initial increase of band gap with was dependent on the formation and growth of these crystal phases. This subsequent decrease of band gap may be related to a reduction in carrier concentration, known as the Burstein-Moss effect [20,21].…”

Section: Optical Measurementsmentioning

confidence: 99%

Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target

Tsai,

Chen,

Huang

et al. 2023

Materials Science-Poland

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The aim of this study is to explore the structural and optoelectronic properties of Cu-Cr-O thin films when processed by the magnetron sputtering method using a single equimolar CuCr alloy target. These films were then post-annealed in a controlled Ar atmosphere at 500°C to 800°C for 2 h. The as-deposited Cu-Cr-O thin film consisted of an amorphous phase and exhibited extremely poor optoelectronic properties. After annealing was conducted at 500°C, monoclinic CuO and spinel CuCr2O4 phases were simultaneously formed in the film. Upon increasing the annealing temperature to 600°C, the CuCr2O4 phase reacted completely with the CuO phase and transformed into the delafossite CuCrO2 phase, possessing optimal optoelectronic performance. It has an electrical resistivity of 41 Ω-cm and a light transmittance of 49.5%, making it suitable for p-type transparent conducting electrodes. A further increase in annealing temperature resulted in larger grains and greater surface roughness and void density, which, in turn, degraded the optoelectronic performance.

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Section: Optical Measurementsmentioning

confidence: 99%