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2020
DOI: 10.1016/j.nima.2020.164308
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Investigations on performance and spectroscopic capabilities of a 3 mm CdTe Timepix detector

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Cited by 10 publications
(13 citation statements)
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“…The measured raw ToT values for a given incident energy will be dispersed. This dispersion is induced on the one hand by the manufacturing process of the ASIC (Application Specified Integrated Circuit), which generates differences in the performances of transistors, and on the other hand, by the crystal defects of the CdTe sensor, such as dislocations and point defects, causing an inhomogeneous sensor layer [12], [13]. As an example, Fig.…”
Section: B Per Pixel Energy Calibration 1) Interests and Motivationmentioning
confidence: 99%
See 1 more Smart Citation
“…The measured raw ToT values for a given incident energy will be dispersed. This dispersion is induced on the one hand by the manufacturing process of the ASIC (Application Specified Integrated Circuit), which generates differences in the performances of transistors, and on the other hand, by the crystal defects of the CdTe sensor, such as dislocations and point defects, causing an inhomogeneous sensor layer [12], [13]. As an example, Fig.…”
Section: B Per Pixel Energy Calibration 1) Interests and Motivationmentioning
confidence: 99%
“…In the case of Timepix3 CdTe, the energy calibration was evaluated by irradiating Timepix3 CdTe from the back of the detector, as suggested in [13]. This implies that before interacting in the semiconductor, incoming photons must pass through the PCB, but most importantly through the ASIC.…”
Section: A Per Pixel Energy Calibration Of Timepix3 Cdtementioning
confidence: 99%
“…Cluster analysis was performed as detailed in [27], with the addition of the time-sensitive component of the Timepix3. The clustering algorithm works by associating active pixels, located inside a predefined radius and time window.…”
Section: Clustering Algorithmmentioning
confidence: 99%
“…The high atomic number (Z CdTe ≈ 50) and density (ρ = 5.854 g/cm 3 at RT) provide superior attenuation efficiency above 30 keV compared to Si (Z Si = 14) and GaAs (Z GaAs ≈ 32) and the wide bandgap energy (E gap = 1.44 eV) permits the usage of the detector at room temperature without active cooling. The absorption efficiency can be enhanced furthermore by increasing the thickness of the material [5].…”
Section: Cadmium Telluridementioning
confidence: 99%