2009
DOI: 10.1016/j.surfcoat.2008.10.012
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Investigations on a nitriding process of molybdenum thin films exposed to (Ar–N2–H2) expanding microwave plasma

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Cited by 19 publications
(26 citation statements)
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“…Jauberteau et al [34,[53][54][55] have prepared molybdenum nitride films from Mo films coated on Si (100) substrates in an expanding plasma reactor. The molybdenum coatings have been deposited by electron beam evaporation of a molybdenum target in pure Ar atmosphere at a pressure of 0.5 Pa on Si substrates heated at 673 K with a radiofrequency electrical discharge operating at 50 W. The deposition rates are typically equal to 0.02-0.25 nms…”
Section: β-Mo2n and γ-Mo2n Films In Expanding Plasmamentioning
confidence: 99%
“…Jauberteau et al [34,[53][54][55] have prepared molybdenum nitride films from Mo films coated on Si (100) substrates in an expanding plasma reactor. The molybdenum coatings have been deposited by electron beam evaporation of a molybdenum target in pure Ar atmosphere at a pressure of 0.5 Pa on Si substrates heated at 673 K with a radiofrequency electrical discharge operating at 50 W. The deposition rates are typically equal to 0.02-0.25 nms…”
Section: β-Mo2n and γ-Mo2n Films In Expanding Plasmamentioning
confidence: 99%
“…The roughness is equal Previous investigations performed on nitrided molybdenum films heated at 873 K and exposed to ternary plasma have shown that a large nitrogen diffusion occurs in molybdenum films with diffusion coefficients ranging between 5 x 10 -10 and 5 x 10 -9 cm 2 s -1 . The formation of grains of nanometer size of Mo 2 N tetragonal structure is also reported [5]. This structure has not been detected in molybdenum films heated at 673 K. Investigations are currently carried out to evidence a possible formation of nonstoichiometric Mo-N phases.…”
Section: Resultsmentioning
confidence: 80%
“…At a depth larger than 40 nm, the oxygen concentration is similar to the one corresponding to the untreated substrate. It is worth noting that the sputtering effect of impinging energetic ions which plays a great role in most of plasma treatments is rather low in our process, since the mean electron energy values range between 0.5 and 0.7 eV in (Ar-N 2 -H 2 ) gas mixtures, so the reduction of oxide layers is mainly due to the reducing properties of hydrogen species [5]. Moreover, the addition of hydrogen in the nitriding gas mixture prevents the molybdenum film from oxidizing during the nitriding process.…”
Section: Resultsmentioning
confidence: 99%
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