Investigations of the temperature dependent Fe2+(3d6) resonant donor level in HgSe:Fe

Szuszkiewicz, W.; Dingrong, Qian; Julien, C.; Zhang, Jiaming; Jez̊ewski, M.; Bałkanski, M.; Mycielski, A.

doi:10.1016/0022-0248(90)91025-l

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…A different situation was stated in HgSe crystal. Various experiments showed that the Fe 2 + state in this compound is degenerate with the conduction band and is located approximately 200 meV above the bottom of the conduction band at 4.2 K (Mycielski et al [9), Pool et al [10], Dobrowolski et al [11], Reich et al [12], Kowalski et al [13], Szuszkiewicz et al [14]). On account of its energetic position Fe in HgSe acts as a resonant donor and it is subject to a self-ionization process Fe 2 + --> Fe3+ + ec,b.…”

Section: The Location Of Fe2+ State In the Band Structure Of Hgsementioning

confidence: 99%

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HgSe Based Mixed Crystals Doped with Fe Resonant Donors

Dobrowolski

1996

Acta Phys. Pol. A

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The article reviews the physical properties of semimagnetic semiconductors of the type Hg1-x-yFexΑ Se1-xΒzVI 1 and Hg1-x-yFexMnySe. Optical, magnetooptical, transport and magnetotransport experiments showed that in Hg1-xFexSe substitutional iron forms a resonant donor state whose energy is superimposed on the conduction band continuum. Resulting anomalous properties of electron scattering rate, i.e. strong enhancement of electron mobility (or drop of Dingle temperature), which occur in Hg1-xFexSe at low temperatures in a certain Fe concentration range, are described. Next, theoretical models describing this anomalous reduction of the scattering rate are discussed. The description of thermomagnetic, optical, magnetooptical and magnetic properties of Hg1-xFe x Se, with emphasis on features originating from the peculiar iron level position in the band structure of Hg 1-xFexSe, conclude the first part of the present paper. In the second part the physical properties of the semiconducting alloys Hg1-x Mn x Se:Fe, Hg1-vCdvSe:Fe, Hg1-xΖnxSe:Fe, HgSe1-xTex:Fe and HgSe1-xSx:Fe are described. In particular, the dependence of the position of the Fe resonant donor state in the band structure on the crystal composition is discussed. The values of predicted Γ6 and Γ8 band offsets between HgSe and CdSe, HgTe, MnSe and ZnSe are given. The considerable attention is paid to the discussion of the m e c h a n i s m l i m i t i n g t h e e l e c t r o n m o b i l i t y i n t h e

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Section: The Location Of Fe2+ State In the Band Structure Of Hgsementioning

confidence: 99%

“…Szuszkiewicz et al [14] performed optical transmission and reflection experiments on Hg1-x Fex Se samples. The experimental curves were compared with the theoretical one, calculated using the formalism of the dynamic dielectric function with the Dude-Zener free-carrier contributions.…”

Section: Optical Propertiesmentioning

confidence: 99%

HgSe Based Mixed Crystals Doped with Fe Resonant Donors

Dobrowolski

1996

Acta Phys. Pol. A

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“…on the basis of transnmission measurements [7,8]. Preliminary results taken on the Fe-doped samples with relatively smaller iron concentration (NFe ranging from 5 x 10 1 8 cm-3 to 4 x 10 1 9 cm-3) correspond to the Fermi energy equal to about EF = 195 meV at low temperatures.…”

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The Dynamic Dielectric Function "Anomaly" for HgSe:Ga and HgSe:Fe

et al. 1991

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An infrared study on the scattering mechanism in HgSe:Fe

Dingrong¹,

Zhang²,

Szuszkiewicz³

et al. 1991

J. Phys.: Condens. Matter

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The infrared absorption and reflectivity of HgSe:Fe samples with Fe concentrations ranging from 1.5 X cm" have been investigated at room temperature in the region 40&2000cm-'. The Drude theory modified with a frequencydependent damping and the rs-r; interband contribution as well as the general theov of free-carrier absorption which takes into acwunt both single-particle and collective absorptions were employed to study the experimental results. The spectral data enable the evaluation of material parameters, such as Ep, N., m: and m,', as well as the determinationof the damping parameter, absorption coefficient, absorption crosssection and mobility. It was found unexpectedly that the absorption parameters and mobility undergoan evident change in their dependence on Fe concentration when the Fe concentration is higher than 4 x 1018cm-3; a weakened scattering rate on free carriers has been assumed. to 7 X

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Investigations of the temperature dependent Fe2+(3d6) resonant donor level in HgSe:Fe

Cited by 3 publications

References 11 publications

HgSe Based Mixed Crystals Doped with Fe Resonant Donors

HgSe Based Mixed Crystals Doped with Fe Resonant Donors

The Dynamic Dielectric Function "Anomaly" for HgSe:Ga and HgSe:Fe

An infrared study on the scattering mechanism in HgSe:Fe

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