The Dynamic Dielectric Function "Anomaly" for HgSe:Ga and HgSe:Fe

Abstract

Reflectivity spectra of HgSe crystals highly doped with Ga and Fe, respectively, were investigated in the spectral region close to the absorption edge at temperatures between 12 K and 295 K. From the analysis of the structure observed in reflectivity the temperature dependence of the Fermi energy was determined for both kinds of crystals.

Composition Dependence of the Energy Gap in HgFeSe - Optical Verification

“…The composition dependence of the Fe level energy at T = 4.5 K was directly observed for x < 0.01 as a shift of the relevant structures in the reflectivity spectra taken in the vicinity of expected Fermi level position (for the details of the method, see [4,5]). For the sample with x = 0.087 at T = 4.5 Κ the Fermi energy value corresponding to measured electron concentration agrees fairly well with the predictions taken from [2].…”