Investigations of the growth of GaAs using stable adducts of gallane

Molecular structures of free quinuclidine and its adducts with metal trihydrides, MH3 (M = B, Al or Ga), studied by gas-phase electron diffraction, X-ray diffraction and quantum chemical calculations

“…Table S12: atomic coordinates and isotropic thermal parameters (Å 2 ) for the hydrogen atoms in 2. Table S13: anisotropic thermal parameters (Å 2 ) for 2. conventional alkylgallium precursors, 5,6 demonstrating the importance of these adducts. The particular stability of the quinuclidine adducts to dissociation into the free base and MH 3 fragments seems to offer their most important advantage.…”

“…Quinuclidine (1-azabicyclo[2.2.2]octane), HC(CH 2 CH 2 ) 3 N, 1, is an interesting and valuable compound noted for its ability to stabilise group 13 trihydrides, particularly for use in chemical vapour deposition (CVD) techniques, such as metal organic molecular beam epitaxy (MOMBE) or chemical beam epitaxy (CBE). 1-3 For example, decomposition of the vapour of quinuclidine gallane, HC(CH 2 CH 2 ) 3 N•GaH 3 , 4 can be used to produce GaAs films efficiently at temperatures much lower than those required for conventional alkylgallium precursors, 5, 6 demonstrating the importance of these adducts. The particular stability of the quinuclidine adducts to dissociation into the free base and MH 3 fragments seems to offer their most important advantage.…”

Hydrido and chloro gallium and aluminium complexes with the tridentate bis(2-dimethylaminoethyl)amide ligand

“…7 Both factors reduce the volatility of the compound. Despite this, the results in GaN and GaAs nanoparticle or thin film preparations using gallium hydride derivatives including [H 2 GaNH 2 ] 3 , 8 [H 2 GaNHNMe 2 ] 2 , 9,10 H 3 Ga(quinuclidine) 11, 12 and [H 2 GaN 3 ] n 13 are promising because of the lower conversion temperatures and reduced carbon contamination. We have been interested in developing new hydride complexes having sufficient volatility and stability for use in CVD and related applications.…”

Adsorption, Desorption, and Reaction of a Gallium Nitride Precursor, (H2GaNHNMe2)2, on HfO2

“…High-quality films were obtained, typically on Al 2 O 3 (0001) substrates, using tri-organyl gallium and ammonia as the precursors, − but high-deposition temperatures were required and dealing with carbon contamination was challenging . New precursors, particularly those containing direct gallium−nitrogen bonds, have been studied to address these problems. − Hydride derivatives including H 3 Ga(quinuclidine), (H 2 GaNH 2 ) 3 , and (H 2 GaN 3 ) n 9 are a group of attractive precursors that do not contain any Ga−C bonds and produced GaAs and GaN at much lower temperatures. On the other hand, alternative nitrogen sources were investigated to replace ammonia. − 1,1-Dimethylhydrazine, H 2 NNMe 2 , was found to decompose at much lower temperatures than ammonia, and GaN films were prepared at lower temperatures. − …”

“…4 New precursors, particularly those containing direct gallium-nitrogen bonds, have been studied to address these problems. [4][5][6][7][8][9][10][11] Hydride derivatives including H 3 Ga(quinuclidine), 12 (H 2 -GaNH 2 ) 3 , 5 and (H 2 GaN 3 ) n 9 are a group of attractive precursors that do not contain any Ga-C bonds and produced GaAs and GaN at much lower temperatures. On the other hand, alternative nitrogen sources were investigated to replace ammonia.…”