Investigations of silicon nitride layers deposited in pulsed microwave generated ammonia–silane plasmas

Krüger, J.; Schweitzer, U.; Schneider, J.; Schulz, Andreas; Walker, M.; Schumacher, U.

doi:10.1016/j.surfcoat.2005.01.112

Cited by 6 publications

(2 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Plasma enhanced chemical vapor deposition (PECVD) systems have been widely used to deposit SiN films in SiH 4 -NH 3 [1,2], SiH 4 -N 2 [3,4], and SiH 4 -N 2 -NH 3 [5,6] discharges as well as other materials [7]. Due to a reduction of particles in the gas phase, a high deposition rate, and a reduced substrate heating, pulsed (P) plasma-applied deposition has been used for SiN deposition [4,8,9]. The deposition temperature has been lowered even to room temperature [10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Kim

2010

Met. Mater. Int.

View full text Add to dashboard Cite

Silicon nitride (SiN) films were deposited using a radio frequency (rf) pulsed-plasma deposition system in a SiH4-N2 plasma at room temperature. The effects of rf bias power and duty ratio on SiN deposition were investigated. The bias power and duty ratio were experimentally varied in ranges of 50 W to 90 W and 30 % to 90%, respectively. An ion energy analyzer was utilized to collect ion energy and ion energy flux. Little variations in low and high energies, respectively with the duty ratio was observed at a duty ratio of over 60 %. In contrast, ion energies sharply decreased with a decrease in the duty ratio to a range of 30 % to 60 % range. Modest variations in high and low energy fluxes were observed at duty ratio of over 40 % and 60%, respectively. Decreasing the bias power increased ion energy fluxes. In general, higher ion energy fluxes were observed at lower bias powers. The deposition rate strongly correlated with a low ion energy flux at 90 W. This was noted in a duty ratio range of 30 % to 50 % at 70 W. A high correlation with a high ion energy flux was also observed at 50 W. For all variations, the deposition rate ranged from158 Å/ min to 185 Å/min.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Kim

2010

Met. Mater. Int.

View full text Add to dashboard Cite

show abstract

“…4 6-7 This is mainly attributed to the fact that they are capable of reducing particle size in gas phase, 6 producing higher deposition rate, and reducing substrate heating. 7 Depending on a duty cycle, a significant variation in SiN film properties was reported. 4 6-7 Surface morphology of SiN films was investigated as a duty cycle in a SiH 4 -N 2 * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Surface Morphology of SiN Film Deposited by a Pulsed-Plasma Enhanced Chemical Vapor Deposition at Room Temperature

Kim¹,

Kim²,

Seo³

et al. 2008

j nanosci nanotechnol

View full text Add to dashboard Cite

Silicon nitride (SiN) films were deposited by a pulsed plasma enhanced chemical vapor deposition system in a SiH4-NH3 chemistry. Surface morphology of SiN films at room temperature is first reported. Scanning electron microscope and atomic force microscopy were used for characterization. Radio frequency source power was varied from 200-800 W with an increment of 200 W. For each power, duty cycle was controlled as 40, 50, 70, 90%. Particularly, surface roughness was detailed in terms of a distribution of maximum pixel size or major pixel density, and a nonuniformity of pixel density. A consistent decrease in surface roughness with reducing duty cycle was observed in the ranges of 40-70% and 40-90% at 200 and 600 W, respectively. In contrast, surface roughness increased with reducing duty cycle at 800 W. Meanwhile, both maximum pixel size and distribution of major pixel density were highly correlated to surface roughness as a function of duty cycle at all powers. These two metrics are expected to effectively characterize the degree of surface densification as well as to support surface roughness variations.

show abstract

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Lee

Kim

Kwon

2010

Current Applied Physics

View full text Add to dashboard Cite

Investigations of silicon nitride layers deposited in pulsed microwave generated ammonia–silane plasmas

Cited by 6 publications

References 3 publications

Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature

Surface Morphology of SiN Film Deposited by a Pulsed-Plasma Enhanced Chemical Vapor Deposition at Room Temperature

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Contact Info

Product

Resources

About