Abstract:Silicon nitride (SiN) films were deposited using a radio frequency (rf) pulsed-plasma deposition system in a SiH4-N2 plasma at room temperature. The effects of rf bias power and duty ratio on SiN deposition were investigated. The bias power and duty ratio were experimentally varied in ranges of 50 W to 90 W and 30 % to 90%, respectively. An ion energy analyzer was utilized to collect ion energy and ion energy flux. Little variations in low and high energies, respectively with the duty ratio was observed at a d… Show more
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