Investigations of laser-produced plasmas from boron nitride targets

Atwee, T.; Aschke, Lutz; Kunze, H.‐J.

doi:10.1088/0022-3727/33/18/309

Cited by 19 publications

(18 citation statements)

References 21 publications

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“…34 In that work, the authors reported Q-switched ruby laser ͑I p ϳ 80 GW cm −2 ͒ ablation of boron, boron-carbide, and boron-nitride, and recorded space and time resolved EUV spectra, using a 10 ns gated detector. 35,36 As our results show, clear issues arise in using a constant N e value for spatiotemporal T ionz calculations. The first showed time resolved temperatures, 1 mm from the target surface, which displayed a slow rise in the T ionz profile, a relatively unresponsive peak followed by a slow fall.…”

Section: A T Ionz Dependency On N Ementioning

confidence: 87%

Plasma diagnostics for investigating extreme ultraviolet light sources

Yeates

White

Kennedy

2010

Journal of Applied Physics

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Plasma temperature and density diagnostics are crucial for lithographic applications of extreme ultraviolet light sources. One widely used technique employs line intensity ratios of successively charged ion states to determine the ion temperature ͑T ionz ͒. This work comprises a detailed "stress-test" of the applied technique, where space and time resolved emission in laser-produced plasmas were studied, using a Nd:yttrium aluminum garnet laser pulse incident on an aluminum target in the 26.5-32.5 nm range. Detailed hydrodynamic simulations also investigate the dependency of ion temperature on electron density and the charge states for various line combinations ͑Al VI/V, Al VII/VI, Al VIII/VII, Al IX/VIII, and Al X/IX͒.

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Section: A T Ionz Dependency On N Ementioning

confidence: 87%

Plasma diagnostics for investigating extreme ultraviolet light sources

Yeates

White

Kennedy

2010

Journal of Applied Physics

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“…and can be expressed in the form [11] V = α n (1) where α is a constant of proportionality and the exponent n depends on the material under investigation. In a recent article [12], we reported spectroscopic investigations of laser-produced plasmas from boron nitride targets. For pulsed lasers of nanosecond duration, boron nitride has a high mass ablation rate for intermediate fluences of the order of 1 kJ cm −2 , and hence investigations of plasma as a function of the drilled hole are readily performed.…”

Section: Introductionmentioning

confidence: 99%

XUV spectroscopic studies of plasma plumes produced from boron, boron carbide and boron nitride targets by a laser

Atwee¹,

Harilal

Kunze

2001

J. Phys. D: Appl. Phys.

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Spectroscopic investigations are made on expanding plasma plumes created by a 20 ns, 3 J laser pulse impinging perpendicularly onto targets of boron, boron carbide and boron nitride. The characterization of the plasma plumes is carried out spectroscopically in the wavelength range from 30 to 330 Å, and by taking pinhole pictures at shorter wavelengths. The experimental results are compared with the plasma plume produced from different targets under the same experimental conditions. The calculated plasma temperatures are 50 eV and 30 eV at 1 mm from the target in the cases of boron and boron carbide targets, respectively. Electron temperature measurements were made as a function of laser irradiance, distance from the target surface and time elapsed after the maximum of the laser pulse.

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“…Oxygen is a well-known contaminant in boron nitride systems, and has been observed in other ablation plasmas from similar boron nitride targets. 21 The primary band system A 3 P!X 3 P of the BN molecule, occurring between 340 and 400 nm, has relatively weak emission intensity compared to the atomic emission, and can be further masked by intense peaks of ionized boron at 345.1 nm and the second positive system C 3 P!B 3 P of excited molecular nitrogen N 2 from 350 nm to 400 nm. This has led to assumptions that the recombination reaction to form BN is not dominant in the plasma 11 and likely to occur at the substrate surface.…”

Section: Resultsmentioning

confidence: 99%

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Glavin

Muratore

Jespersen

et al. 2015

Journal of Applied Physics

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Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B þ , B*, N þ , N*, and molecular species including N 2 *, N 2 þ , and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N þ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N þ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas. V C 2015 AIP Publishing LLC. [http://dx.

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Investigations of laser-produced plasmas from boron nitride targets

Cited by 19 publications

References 21 publications

Plasma diagnostics for investigating extreme ultraviolet light sources

Plasma diagnostics for investigating extreme ultraviolet light sources

XUV spectroscopic studies of plasma plumes produced from boron, boron carbide and boron nitride targets by a laser

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

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