Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment

Abstract

This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (L G ) can be achieved by using nitric acid (HNO 3 ) PME treatment owing to the high etching selectivity of HNO 3 of Ni against the Au and GaN layer. Influences on L G , etched gate profiles and device characteristics with respect to different PME processing parameters by HNO 3 treatment are systematically investigated. Optimum device performance is obtained as L G was reduced to 0.5 μm by using a 1 μm long gate mask by immersing the device into a 45% diluted HNO 3 solution for 35 s. Improved device performances, including maximum drain-source current density (I DS, max : 657.6 mA mm −1 → 898.5 mA mm −1 ), drain-source saturation current density at zero gate bias (I DSS0 : 448.3 mA mm −1 → 653.4 mA mm −1 ), maximum extrinsic transconductance (g m, max : 158.3 mS mm −1 → 219.2 mS mm −1 ), unity-gain cut-off frequency (f T : 12.35 GHz → 22.05 GHz), maximum oscillation frequency ( f max : 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.