This work investigates a Ti0.5Al0.5O-dielectric Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) grown on a Si substrate, prepared by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. High dielectric constant (k) was characterized to be 29.1 for a 20-nm thick Ti0.5Al0.5O. Hooge coefficient (αH), low-frequency noise spectra (1/f), high/low frequency capacitance-voltage (C-V), pulse I-V measurements were also performed to investigate the improved passivation and insulation of the MOS-structure. The present MOS-HFET design has exhibited superior improvements of 23% in maximum drain-source current density (IDS, max), 25.1% in drain-source saturation current density at VGS = 0 V (IDSS0), 46.3% in two-terminal off-state gate-drain breakdown voltage (BVGD), and 65% in three-terminal drain-source breakdown voltage (BVDS), as compared to a reference Schottky-gate HFET device. Enhanced high-frequency, power, and high-temperature performances up to 450 K are also studied.
Isoparametric B-spline wavelet functions can provide excellent approximation for smooth functions. In this paper, the response of composite laminated plate subjected to explosions is analyzed by using a double thick beam FEM mode based on the spline wavelet function. This mode, which can be considered in the distribution of normal stress and transverse shear stress simultaneously, is very important in the analysis of thick plate or blast-damage mechanism. The mode in analyzing underground structure and earth medium respond has the advantage of high precision and fast constringency and is easy to establish a element displacement function. The comparison between simulative and experimental results shows the effectiveness and precision of this method.
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