Investigations by SIMS of the bulk impurity diffusion of Ge in Si

Dörner, P.; Gust, W.; Predel, B.; Roll, U.; Lodding, A.; Odelius, H.

doi:10.1080/01418618408236556

Cited by 66 publications

(31 citation statements)

References 7 publications

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“…The later Ge diffusion measurements of Dorner, Gust, Predel, and Roll (1984), however, show higher diffusivities than the previous two works. In addition, whereas the measurements of Hettich et al show a non-Arrhenius behavior over an extended temperature range (875 -1300'C), the measurements of Dorner et al show only a single activation energy of diffusion of 5.35 eV over the same temperature span.…”

Section: Non-coulombic Interactionscontrasting

confidence: 60%

Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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Section: Non-coulombic Interactionscontrasting

confidence: 60%

Point defects and dopant diffusion in silicon

1989

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“…They concluded that germanium diffusion in single-crystal silicon occurs by both substitutional-interstitial interchange and vacancy mechanisms. Both Frank et al 13 and Fahey et al 14 suggest that non-Arrhenius behavior seen at about 1050°C is caused by a change in diffusion mechanism at this temperature, although this view is not supported by Dorner et al, 9 who performed a large study on 70 Ge using SIMS analysis. In conclusion, the diffusion of Ge in polysilicon has been quantified to support an investigation of the anomalously high diffusion of Ge in polysilicon emitters of synthesized SiGe HBTs.…”

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confidence: 81%

“…3 also compares our measured values of diffusivity in polysilicon with measured values from the literature in single-crystal silicon. 8,9 It can be seen that the values for polysilicon are considerably higher than those for single-crystal silicon. For example, at a temperature of 900°C, the diffusivity of Ge in polysilicon is approximately four orders of magnitude higher than that in single-crystal silicon.…”

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confidence: 95%

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Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

Mitchell

Ashburn

Hemment

2002

Journal of Applied Physics

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A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045°C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between 800 and 900°C and modeled by an Arrhenius relationship with a preexponential factor of D o ϭ0.026Ϯ0.023 cm 2 /s and an activation energy of Eϭ2.59Ϯ0.36 eV. The measured diffusivity in polycrystalline silicon is Ϸ10 4 times larger than that reported for single-crystal silicon. It is hypothesised that germanium diffusion in polysilicon occurs by diffusion along grain boundaries.

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“…[13][14][15][16][17][18][19][20][21] Heat treatment, * Author to whom correspondence should be addressed. concentration gradients and local lattice strain all influence Ge diffusion in Si.…”

mentioning

confidence: 99%

Diffusion in Si_xGe_1−x/Si Nanowire Heterostructures

Zhang¹,

Kulik²,

Dickey³

2007

j nanosci nanotechnol

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Si0.48Ge0.52/Si tip/nanowire heterostructures were grown by pulsed laser vaporization (PLV) at a growth temperature of 1100 degrees C. Ge diffusion in [111]-growth Si nanowires was studied for different post-synthesis annealing temperatures from 200 degrees C to 800 degrees C. Ge composition profiles were quantified by energy-dispersive X-ray spectroscopy in a transmission electron microscope. The compositional profiles were modeled by a limited-source diffusion model to extract temperature-dependent diffusion coefficients. The Ge diffusion coefficients followed an Arrhenius relationship with an activation energy of 0.622 +/- 0.050 eV. This rather low activation energy barrier is similar to the previously reported activation energy barrier of 0.67 eV for Ge surface diffusion on Si, suggesting that surface diffusion may dominate in nanowires at this length scale.

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Investigations by SIMS of the bulk impurity diffusion of Ge in Si

Cited by 66 publications

References 7 publications

Point defects and dopant diffusion in silicon

Point defects and dopant diffusion in silicon

Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

Diffusion in Si_xGe_1−x/Si Nanowire Heterostructures

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Investigations by SIMS of the bulk impurity diffusion of Ge in Si

Cited by 66 publications

References 7 publications

Point defects and dopant diffusion in silicon

Point defects and dopant diffusion in silicon

Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

Diffusion in SixGe1−x/Si Nanowire Heterostructures

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Product

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Diffusion in Si_xGe_1−x/Si Nanowire Heterostructures