INVESTIGATION PROPERTIES OF a-Si_1-xC_x:H FILMS ELABORATED BY CO-SPUTTERING OF Si AND 6H-SiC

Abstract

Hydrogenated amorphous SiC films ( a - Si 1-x C x: H ) were prepared by DC magnetron sputtering technique on p type Si (100) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6 H - SiC ). The deposited film a - Si 1-x C x: H was realized under a mixture of argon and hydrogen gases. The ( a - Si 1-x C x: H ) films have been investigated by scanning electronic microscopy equipped with EDS system (SEM-EDS), X-rays diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-visible-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure of a - Si 0.81 C 0.19: H corresponding to 19 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centered at 463 nm (2.68 eV) and 542 nm (2.29 eV). The structural properties and the origin of the luminescence were discussed.

Photochemical Conversion of CO2into Methyl Alcohol Using SiC Micropowder under UV Light

“…Figure 4 depicts the diffuse reflectance spectrum where (F (R)E) 1/2 versus E is plotted and the band gap energy estimated is 3.05 eV approximately corresponds to 406 nm of wavelength. This band gap energy is closer to the band gap energy of the SiC of polytype 6H-SiC [16,17]. This justifies the use of 365 nm (3.47 eV) UV light as incident radiation for 6H-SiC in our study which is capable of promoting the electron from the valance to conduction band and thereby triggering photoreduction process.…”