Investigation on wirebond-less power module structure with high-density packaging and high reliability

Ikeda, Yoshinari; Iizuka, Yuji; Hinata, Yuichiro; Horio, Masafumi; Hori, Masashi; Takahashi, Yoshikazu

doi:10.1109/ispsd.2011.5890843

Cited by 37 publications

(5 citation statements)

References 3 publications

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“…Compared with conventional alumina ceramic structure, the Cu pin structure enabled a 50% reduction in the thermal resistance of the overall structure. Compared with the conventional Si-based wirebonded package, the loss reduction with SiC devices was 57%-87% using the Cu pin structure [60], [61].…”

Section: -D Packaging Techniquementioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent with aluminum wires. In this article, low parasitic inductance and high-efficient cooling interconnection techniques for Si power modules, which are the foundation of packaging methods of SiC ones, are reviewed first. Then, attempts on developing packaging techniques for SiC power modules are thoroughly overviewed. Finally, scientific challenges in the packaging of SiC power module are summarized.

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Section: -D Packaging Techniquementioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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“…Today, the most advanced solutions use the Printed Circuit Board (PCB) technology, the multi-layer interconnects allowing for a reduction of stray inductances [11]. Main solutions are:…”

Section: A Literature Overviewmentioning

confidence: 99%

Implementation and Switching Behavior of a PCB-DBC IGBT Module Based on the Power Chip-on-Chip 3-D Concept

Marchesini

Jeannin

Avenas

et al. 2017

IEEE Trans. on Ind. Applicat.

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With the emergence of new power semiconductor devices, the switching speeds in power converters are increasing. The stray inductances of switching cells must therefore be minimized to limit over-voltages on transistors. One relatively new approach, called Power Chip-on-Chip (PCoC), considers the integration of power dies, one on top of the other, directly in the busbar. This allows for the reduction of the stray inductance. This paper first presents the implementation of a PCoC module using classical packaging techniques. Then a description of the different technological steps for the realization is outlined. Finally, experimental characterization results confirm the lower stray inductances offered by the PCoC package compared with the planar one. I.

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“…Figure 13 illustrates structure schematics of a new package and of a conventional package. In order to realize high power density, newly developed structure has copper pin attached each chip electrode as alternative elements to wire-bond [4]. As the measure against a rise of the chip temperature Tj accompanying the high power density, low thermal-resistance is attained by adopting the direct copper bonding (DCB) board which has thick Cu board and Silicon-Nitride (Si3N4) board [5].…”

Section: B Sic-mosfet/sic-sbd Modulementioning

confidence: 99%

Characteristics of the Power Electronics Equipments applying the SiC power devices

Mine

Matsumoto

Yamada

et al. 2012

2012 International Conference on Power Engineering and Renewable Energy (ICPERE)

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Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.

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Investigation on wirebond-less power module structure with high-density packaging and high reliability

Cited by 37 publications

References 3 publications

Review of Packaging Schemes for Power Module

Review of Packaging Schemes for Power Module

Implementation and Switching Behavior of a PCB-DBC IGBT Module Based on the Power Chip-on-Chip 3-D Concept

Characteristics of the Power Electronics Equipments applying the SiC power devices

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