Investigation on the Plasma-Induced Emission Properties of Large Area Carbon Nanotube Array Cathodes with Different Morphologies

Liao, Qingliang; Qin, Zi; Zhang, Zheng; Qi, Junjie; Zhang, Yue; Huang, Yunhua; Liu, Liang

doi:10.1007/s11671-010-9784-x

Cited by 3 publications

(1 citation statement)

References 22 publications

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“…The electron and hole transit times (τ tr = L 2 /2 μV D ) in the channel are estimated to be 0.21 and 0.22 μs. This may be due to the dissociation of oxygen molecules or H 2 O molecules, which affects the photoresponse of the PtSe 2 device. − In addition, PPC is usually caused by photogenerated carriers in defect or charge impurity states within the bandgap, which requires a relatively long recombination time through defects or charge impurity compared to the fast interband recombination of electron–hole pairs.…”

Section: Resultsmentioning

confidence: 99%

PtSe₂ Field-Effect Phototransistor with Positive and Negative Photoconductivity

Zhang

Wang

et al. 2022

ACS Appl. Electron. Mater.

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Platinum diselenide (PtSe 2 ) has been exploited for visible and infrared photodetectors due to its tunable electrical and photoelectric properties determined by a layer-dependent band gap. We investigated the photoconductive mechanism of the fewlayer (3 nm) PtSe 2 field-effect phototransistor (FEPT) under illumination of visible and infrared lasers. The few-layer PtSe 2 FEPT shows ambipolar characteristics modulated by a gate voltage with a mobility of 1496.7 cm 2 v −1 s −1 (electron) and 1410 cm 2 v −1 s −1 (hole) at V DS = 0.16 V. Both positive photoconductivity (PPC) and negative photoconductivity (NPC) were observed in the PtSe 2 photodetector. The responsivity (R) of the device at V G = 4 V was 0.14 A/W, 0.63 A/W, and 0.086 A/W, and the specific detectivity (D*) was 4.34 × 10 8 Jones, 1.95 × 10 9 Jones, and 2.4 × 10 8 Jones under 532, 808, and 405 nm laser irradiation, respectively. The R of the device at V G = −2.4 V was 0.525 A/W, 0.34 A/W, and 0.087 A/W, and theD* was 1.84 × 10 9 Jones 1.06 × 10 9 Jones, and 2.19 × 10 8 Jones. The change of the photoconductivity is attributed to a combination of three mechanisms: (1) photoinduced desorption of oxygen molecules from the surface, which is related to the NPC; (2) the photoinduced carriers, which leads to PPC; and (3) the photogating effects related to the photoinduced electrons in the interface of PtSe 2 /SiO 2 . NPC dominates in the device at a high gate voltage due to the photogating effect. Through the study of the P/NPC mechanism in PtSe 2 , understanding of the photoconductive mechanism in the field of photoelectric detection is further deepened.

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Section: Resultsmentioning

confidence: 99%

PtSe₂ Field-Effect Phototransistor with Positive and Negative Photoconductivity

Zhang

Wang

et al. 2022

ACS Appl. Electron. Mater.

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A THz-band emitter based on a single-walled carbon nanotube with encapsulated fullerenes

Glukhova

Kolesnikova

Слепченков

et al. 2015

2015 40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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Comparative study on intense emission of velvet and cabon nanotube cathode

Cai¹,

Liu²,

Ju³

et al. 2016

Acta Phys. Sin.

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So far, the investigations of carbon nanotube (CNT) cathode have been focused on the field emission with low current and voltage. However, the properties of the intense pulsed emission of CNT cathode have not been discussed deeply and comprehensively. In this paper, the intense emission properties of velvet and CNT cathode are studied in various aspects, such as emission capability, cathode plasma expansion, cathode initialization, emission uniformity, operation stability, outgassing property, and so on. Three different CNT cathodes are made by using electrophoresis deposition, chemical vapor deposition and also CNT paper (or buckypaper) gluing. Results show that the emission capability of CNT arrays and CNT paper cathode is definitely better than the velvet cathode. At the same diode voltage (～300 kV), the amplitudes of diode current of CNT array and CNT paper are 2.75 and 3.1 kA respectively, which are bigger than that of the velvet cathode (～1 kA). The orientation of CNT should not affect the emission capability of CNT cathodes. And the small radius of the tube wall and the existence of defects are suggested to be the reasons for the emission of electrons from the body of the tubes. The threshold electric field strength of intense emission of CNTs is about two-thirds of velvet cathode. The onset delay time of CNT cathode is shorter than the velvet cathode by about 12-17 ns at the same electric field growth rate. The time-evolution processes of the plasma expansion velocity of CNT and velvet cathodes are similar, which could be divided into three phases (rapid rising, quick decreasing and stable phase). In summary, the plasma expansion velocity of CNT cathode is less than one fourth that of velvet at the end of the first phase. During the stable phase, which sustains until the end of the voltage pulse, both cathodes have the same plasma expansion velocity (7 cm/s). The emission uniformity of the cathode has been studied by analyzing the distributions of cathode plasma spots and Cherenkov radiation light, which are captured by the high speed frame camera. The emission uniformity of CNT cathode is much better than that of the velvet cathode. Especially, the cathode plasma spots on the whole surface of CNT array cathode are very dense and uniform. The peak outgassing pressure of the CNT paper cathode is 0.3 Pa, which is one fifth that of the velvet cathode; while the peak outgassing pressure of the CNT array cathode is 0.042 Pa, which is the lowest, and the outgassing pressure of the CNT cathode is related to the fabrication methods. Volatile such as epoxy should be avoided in the fabrication processes. This CNT cathode appears to be suitable for intense emission source and high-power microwave device applications.

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Investigation on the Plasma-Induced Emission Properties of Large Area Carbon Nanotube Array Cathodes with Different Morphologies

Cited by 3 publications

References 22 publications

PtSe₂ Field-Effect Phototransistor with Positive and Negative Photoconductivity

PtSe₂ Field-Effect Phototransistor with Positive and Negative Photoconductivity

A THz-band emitter based on a single-walled carbon nanotube with encapsulated fullerenes

Comparative study on intense emission of velvet and cabon nanotube cathode

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Investigation on the Plasma-Induced Emission Properties of Large Area Carbon Nanotube Array Cathodes with Different Morphologies

Cited by 3 publications

References 22 publications

PtSe2 Field-Effect Phototransistor with Positive and Negative Photoconductivity

PtSe2 Field-Effect Phototransistor with Positive and Negative Photoconductivity

A THz-band emitter based on a single-walled carbon nanotube with encapsulated fullerenes

Comparative study on intense emission of velvet and cabon nanotube cathode

Contact Info

Product

Resources

About

PtSe₂ Field-Effect Phototransistor with Positive and Negative Photoconductivity

PtSe₂ Field-Effect Phototransistor with Positive and Negative Photoconductivity