Abstract:Ohmic contact is important for silicon carbide (SiC) devices such as Schottky diode, junction field effect transistor (JFET) and metal oxide transistor (MOSFET). The effect of post metallization annealing (PMA) on the ohmic characteristics of Ni/Ti/4H-SiC is investigated. The samples were annealed under different ambients of high vacuum, forming gas and N2 gas at 1050˚C for 3 minutes using rapid thermal process (RTP). Current-voltage (I-V) measurements taken for different distances of a transmission line model… Show more
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