Investigation on the long term reliability of power IGBT modules

Wu, Wuchen; Held, Martin; Jacob, Peter; Scacco, P.; Birolini, Alessandro

doi:10.1109/ispsd.1995.515079

Cited by 34 publications

(9 citation statements)

References 7 publications

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“…Various studies have demonstrated that distinct dominant failure mechanisms are activated within the structure depending on the length of the heating period [52,53]. From a traditional perspective, shorter cycle tests primarily affect the lifetime of bond wires, whereas longer cycles predominantly lead to failures in the solder layers [54]. The boundary between short and long cycles remains somewhat ambiguous.…”

Section: Power Cycling Test Setupmentioning

confidence: 99%

Optimizing Insulated-Gate Bipolar Transistors’ Lifetime Estimation: A Critical Evaluation of Lifetime Model Adjustments Based on Power Cycling Tests

Alavi,

De Ceuninck,

Daenen

2024

Energies

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This paper presents a detailed refinement and validation of two well-known lifetime prediction models for IGBTs, namely CIPS08 and SKiM63, using experimental power cycling test data. This study focuses on adapting these models to reflect the operational conditions and degradation patterns to more accurately fit different IGBT types and applications. Key modifications include recalibrating the scale factor and temperature coefficients in the SKiM63 model and refining the CIPS08 model coefficients (β1 = −2.910, β2 = 1083.714, β3 = −4.521) based on the impact of temperature fluctuations, bond wire diameter, and electrical stresses observed during power cycling tests. These adjustments provide a significant shift from traditional values, with the recalibrated models offering a better fit, as evidenced by a reasonable coefficient of determination (R2) and root mean square error (RMSE). Utilizing Monte Carlo simulations with a 5% uncertainty, the study calculates the B10 lifetimes of PV inverters, demonstrating a substantial reduction from 43 years in the unmodified model to 13 years in the modified model. This emphasizes the critical need for ongoing modification and validation of predictive models based on the actual operational data to enhance the reliability and efficiency of IGBTs in power electronic systems.

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Section: Power Cycling Test Setupmentioning

confidence: 99%

Optimizing Insulated-Gate Bipolar Transistors’ Lifetime Estimation: A Critical Evaluation of Lifetime Model Adjustments Based on Power Cycling Tests

Alavi,

De Ceuninck,

Daenen

2024

Energies

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“…Several efforts are described in literature, aiming to study each of the failure mechanisms. The work presented in [38] focused on bond wire lift-off as the main failure mechanism, while more recent publications, as FIGURE 2 Schematic diagram of the PCT bench power circuit for example [9,19] and [39] highlight the solder fatigue of the die as the dominant failure mechanism. It is assumed that the results obtained are to a high degree reflected by the variety of module technologies, as well as by the fact that there has been a significant technology development over the time span for all these publications.…”

Section: Limitations and Challenges On Applying The Lifetime Modelsmentioning

confidence: 99%

Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles

Hernes

D’Arco

Antonopoulos

et al. 2021

IET Power Electronics

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Lifetime models of high-power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from accelerated power-cycling tests performed at predefined temperature stress conditions as, for example, with temperature swings above 60 • C. However, in real power converters applications, the power modules are usually stressed at temperature cycles not exceeding 40 • C. Thus, extrapolating the parameters of lifetime models developed using data from high-temperature stress cycles experiments might result in erroneous lifetime estimations. This paper presents experimental results from power cycling tests on high-power Insulated Gate Bipolar Transistors modules subjected to low temperature stress cycles of 30 and 40 • C. Therefore, devices experience still accelerated aging but with stress conditions much closer to the real application. Post-mortem failure analysis has been performed on the modules reaching end-oflife in order to identify the failure mechanism. Finally, the number of cycles to end-of-life obtained experimentally is fit with a state-of-the-art lifetime model to assess its validity at low temperature stress cycles. Challenges and limitations on data fitting to this lifetime model and the impact of various stress parameters on the anticipated failure are also presented.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…3). Reconstruction of metallization is mentioned in the literature as a third failure mechanism but it is not completely investigated yet , (Wu, Held, Jacob, Scacco & Birolini, 1995), (Wintrich et al 2011).…”

Section: Failure Mechanismsmentioning

confidence: 99%

A Review of Prognostics and Health Management for Power Semiconductor Modules

et al. 2015

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In this paper, a review of current techniques used in the prognostics and state-of-health monitoring for power semiconductor modules is provided. Given the increasing trend in power modules having a larger share of the power electronic market, understanding their lifetime limitations is critical to improving the life-cycle cost of the power electronic product. Hence, this paper reviews common failure mechanisms in power modules and the state-of-art in predicting the lifetime of the module based on a given mission profile. Prognostics are reviewed in terms of stress- based and condition monitoring-based methods, while the potential of prognostics is presented for applications that utilize power modules.

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Investigation on the long term reliability of power IGBT modules

Cited by 34 publications

References 7 publications

Optimizing Insulated-Gate Bipolar Transistors’ Lifetime Estimation: A Critical Evaluation of Lifetime Model Adjustments Based on Power Cycling Tests

Optimizing Insulated-Gate Bipolar Transistors’ Lifetime Estimation: A Critical Evaluation of Lifetime Model Adjustments Based on Power Cycling Tests

Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles

A Review of Prognostics and Health Management for Power Semiconductor Modules

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