Investigation on the effect of Cu-doping to ZnTe layers by low-cost electrochemical approach

Chaure, Nandu B.; Chaure, Shweta; Pandey, R. K.

doi:10.1007/s10854-017-6990-7

Cited by 5 publications

(1 citation statement)

References 31 publications

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“…Hence, zinc telluride crystals have a potential application in light emitting diodes and photovoltaic cells. It has been reported that the crystalline zinc telluride thin films were able to be synthesized using some crystal growing processes, such as vacuum evaporation [1,2], sputter deposition [3], CVD [4], and electrochemical growth from a non-aqueous solvent [5][6][7][8][9] and from an aqueous solution [10][11][12][13][14][15][16][17][18][19][20][21][22][23]. The electrochemical growing technique from an aqueous solvent has an excellent cost-performance in comparison to the other processes and it enables us to coat a conventional wide panel with a practically applicable surface appearance.…”

Section: Introductionmentioning

confidence: 99%

Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid

Ohta

Ohgai

2021

Applied Sciences

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Using the potentiostatic electrodeposition technique, zinc telluride nanocrystalline thin films and an array of nanowires were synthesized in a citric acid bath. Electrodeposited zinc telluride thin films with stoichiometric compositions were obtained at a cathode potential of approximately −0.8 V versus Ag/AgCl, which was in a more noble region compared with the equilibrium potential of zinc. The average thickness of the zinc telluride thin films was approximately 3 μm, and the average growth rate was approximately 3 nm s−1. The as-deposited zinc telluride thin films had an amorphous phase with a black tint. By contrast, the zinc telluride thin films annealed at 683 K had a crystalline phase with a reddish-brown tint. The electrodeposited single-phase zinc telluride exhibited an optical absorption performance in a wavelength region that was shorter than 559 nm. At the annealing temperature of 683 K, the zinc telluride films exhibited an energy band gap of 2.3 eV, which was almost identical to that of single-crystal zinc telluride. The resistivity of the as-deposited amorphous-like zinc telluride thin films was approximately 2 × 105 Ω·m, whereas that of the samples annealed at 683 K was around 2 × 103 Ω·m, which was smaller than that of single-crystal zinc telluride. A three-dimensional nanostructure constructed with the zinc telluride nanowire array was also demonstrated using a template synthesis technique.

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