Investigation on the barrier height and phase transformation of nickel silicide Schottky contact

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

“…Although Schottky interfaces have been well studied for over 50 years, it is only in the past decade that an inhomogeneous contact [5][6][7][8][9][10][11][12][13][14][15] has been considered as an explanation for a voltagedependent barrier height [14][15][16][17][18][19][20][21][22][23][24][25][26]. As mentioned in Refs.…”

“…Schottky barrier diodes (SBDs) are of the most simple of the MS contact devices [1][2][3][4][5][6][7], a full understanding of the nature of their electrical characteristics is of great technological importance in the electronics industry [7][8][9][10][11][12][13]. Although Schottky interfaces have been well studied for over 50 years, it is only in the past decade that an inhomogeneous contact [5][6][7][8][9][10][11][12][13][14][15] has been considered as an explanation for a voltagedependent barrier height [14][15][16][17][18][19][20][21][22][23][24][25][26].…”

Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

“…In particular, the Schottky diodes have important applications in bipolar integrated circuits such as clamps, load resistor, couplers, and level shifters [8,9]. Moreover, Schottky diodes with low barrier height (BH) play an important role in devices operating at cryogenic temperatures as infrared detectors, sensors in thermal imaging, microwave diodes, gates of transistors and infrared and nuclear particle detectors [9][10][11][12][13][14].…”

Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing

“…A maximum barrier height was obtained at annealing temperature of 550°C to 600°C. 22 Roccaforte et al found that, for the Ni/SiC contact, as the annealing temperature was increased from 500°C and above, nickel-rich silicides such as Ni 31 Si 12 form prior to conversion to the more stable Ni 2 Si. 23 We propose the following explanation for the drop in series resistance shown in Fig.…”