Investigation on structural, linear, nonlinear and optical limiting properties of sol-gel derived nanocrystalline Mg doped ZnO thin films for optoelectronic applications

Shkir, Mohd.; Arif, Mohd; Ganesh, V.; Manthrammel, M. Aslam; Singh, Arun; Yahia, I.S.; Maidur, Shivaraj R.; Patil, P. S.; AlFaify, S.

doi:10.1016/j.molstruc.2018.06.105

Cited by 62 publications

(17 citation statements)

References 68 publications

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“…The glass/ITO substrate presents an average transmittance, in the visible region, of 90%, while the ZA1, ZA2, and ZA3 films show transmittance of ~88, 80, and 79.8%, respectively, and have absorption bands at wavelengths of 350-650 nm. This indicates that the investigated thin films exhibit excellent optical properties in the visible and near-infrared region and are semiconductors suitable for applications in electronic devices [28].…”

Section: Structural and Optical Propertiesmentioning

confidence: 66%

Memristor Behavior under Dark and Violet Illumination in Thin Films of ZnO/ZnO-Al Multilayers

Melo¹,

Araújo²,

Valença³

et al. 2020

Memristors - Circuits and Applications of Memristor Devices [Working Title]

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ZnO/ZnO-Al thin films were grown aiming the development of a memristor. Electrical voltage sweeps were imposed to induce dopant migration and to achieve several resistance states. A memristor behavior was observed, presenting adaptation to external electrical stimulus. Voltage sweeps occurred under the influence of violet light and in the dark, alternately, and the influence of the photon incidence on the current intensity was noticed. Throughout the alternating cycles between light and dark, less resistance was observed under illumination, but the migration of Al and O ions caused the formation of Al 2 O 3 and ZnO oxides, resulting in a gradual increase in resistance. With constant voltage, the device presented continuous modification of resistance and sensitivity to the violet light with generation of free carriers. These results bring new opportunities for using memristors as violet light sensors as well as new insights for light-controlled memristor development.

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Section: Structural and Optical Propertiesmentioning

confidence: 66%

Memristor Behavior under Dark and Violet Illumination in Thin Films of ZnO/ZnO-Al Multilayers

Melo¹,

Araújo²,

Valença³

et al. 2020

Memristors - Circuits and Applications of Memristor Devices [Working Title]

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“…The peak intensity was maximum for Mg dopant concentration equal to about 15 wt% confirming the improvement in the crystallinity upon doping. The presence of single phase in the XRD pattern confirms the replacement of Zn 2+ by Mg 2+ which has similar ionic radii (0.72A) and does not change its structure[17]. The cry nm) of MZO thin film for (002) peak was estimated using Debye-Scherer equation and shown in table 1 [18]…”

mentioning

confidence: 70%

Second and third harmonic nonlinear optical process in spray pyrolysed Mg:ZnO thin films

et al. 2020

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In the present study, Mg-doped ZnO (MZO) nanofilms (NF) were grown by spray pyrolysis technique. X-ray diffraction (XRD) patterns have shown an intense peak oriented along (002) crystalline plane confirming crystalline origin of grown MZO films. Atomic force microscopy (AFM) data revealed that the average roughness decreased significantly upon Mg doping from 20.3 nm to 4.72 nm. Ambient temperature photoluminescence spectra accounted for four emission bands in the visible spectral region due to the presence of various intrinsic defect centres in the films. The non-linear absorption coef eff ) were estimated by open aperture Z-scan technique and found to be in the order of 10 -2 (cm/W) and indicates a positive absorption nonlinearity. Additionally, it was observed that incorporation of the metal Mg ions leads to a decay of the second harmonic generation (SHG) and to a non-regular increase of the third harmonic generation (THG).

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“…The optical parameters like refractive index n ( ) and extinction coefficient k ( ) for MgZnO films by CBD were calculated by the relations taken from [10,37,38] and are given below.…”

Section: Optical Constants Analysismentioning

confidence: 99%

“…The complex dielectric constant e ( ) defines the phonons excitation and optical transition in the material. The real and imaginary parts of e can be calculated by the following relations [37,39].…”

Section: Optical Constants Analysismentioning

confidence: 99%

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Comparative study for seed layer solvent effects on structural and optical properties of MgZnO thin films deposited by chemical bath deposition technique

Baig

Asif

Ashraf

et al. 2020

Mater. Res. Express

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C-axis oriented Magnesium doped Zinc Oxide (MgZnO) thin films are promising candidates for variety of applications especially optoelectronic devices. In this work, the effects of seeding solvents on structural and optical properties of MgZnO films were analyzed. The comparison was performed by varying the seed layer solvent i.e. 2-Methoxyethanol, 2-Propanol, Ethanol and Methanol. MgZnO thin films were synthesized on different seed layered glass substrates using Chemical Bath Deposition (CBD) method. The XRD results revealed the hexagonal wurtzite structure for all samples. However, the film with seed layer 2-Methoxyethanol solvent had preferred c-axis orientation and better crystallanity. For 2-Methoxyethanol solvent based seed layer: the morphological study showed wrinkled free, unfractured and highly aligned MgZnO nanorods grown perpendicular to the substrate. Energy dispersive x-ray (EDS) spectroscopy confirmed the presence of magnesium in ZnO film. Highest average transmittance of 80% and band gap value of 3.3 eV was recorded through UV-vis spectroscopy. The optical constants (refractive index and extinction coefficient) were determined by reflectance and absorbance data. Furthermore complex dielectric constant and energy loss functions were estimated.

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Investigation on structural, linear, nonlinear and optical limiting properties of sol-gel derived nanocrystalline Mg doped ZnO thin films for optoelectronic applications

Cited by 62 publications

References 68 publications

Memristor Behavior under Dark and Violet Illumination in Thin Films of ZnO/ZnO-Al Multilayers

Memristor Behavior under Dark and Violet Illumination in Thin Films of ZnO/ZnO-Al Multilayers

Second and third harmonic nonlinear optical process in spray pyrolysed Mg:ZnO thin films

Comparative study for seed layer solvent effects on structural and optical properties of MgZnO thin films deposited by chemical bath deposition technique

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