Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications

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Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications

Cited by 4 publications

References 36 publications

Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors

Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage

On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications

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