On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications

Das, Shreyasi; Kumari, Vandana; Sehra, Khushwant; Gupta, Mridula; Saxena, Manoj

doi:10.1016/j.micrna.2023.207653

Cited by 2 publications

References 30 publications

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Geng

2024

Physica Status Solidi (a)

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A detailed analysis of self‐consistent potentials, electric fields, electron distributions, and transport properties of dual‐channel (DC) n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN high‐electron‐mobility transistors (HEMTs) is performed in this article. The 2D electron gas (2DEG) densities and mobility states limited by different scattering mechanisms in channel 1 and channel 2 are obtained, with varying values of doping concentrations, ambient temperatures, Al components, and thicknesses of the back barrier layer. The reduced and increased 2DEG densities are respectively observed in channel 1 and channel 2 with growing Al fractions and thicknesses of the AlxGa1−xN layer. Alloy disorder scattering exhibits a superior effect on carriers in channel 2 due to the lower barrier height and higher permeable electrons, which together with the interface roughness scattering severely depends on the thicknesses and Al fractions of the back barrier layer. Polar optical phonon scattering becomes important at higher temperatures. The trend of individual mobility in channel 1 is exactly opposite to that in channel 2. The parameter variation of the back barrier layer can effectively change the scattering characteristics of the main channel. Low‐temperature mobilities of n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN HEMTs under varied doping concentrations are also obtained. Finally, the results are verified by comparison with the technology computer‐aided design simulations for DC HEMTs.

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Geng

2024

Physica Status Solidi (a)

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Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNAs

Das,

Sehra,

Kumari

et al. 2024

Springer Proceedings in Physics

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On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications

Cited by 2 publications

References 30 publications

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNAs

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On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications

Cited by 2 publications

References 30 publications

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNAs

Contact Info

Product

Resources

About

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors