2017
DOI: 10.1016/j.jallcom.2016.10.279
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Investigation on electronic and magnetic properties of (Fe, In) co-doped ZnO

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Cited by 14 publications
(2 citation statements)
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“…At the same time, a series of breakthroughs have been made in the preparation of ferroelectric thin films, and various film prep aration methods have been successfully used in the prep aration of ferroelectric thin films, such as sol-gel, chemical vapor dep osition, radio frequency sputtering, molecular beam epitaxy, and pulsed laser deposition (PLD) [18][19][20][21]. The PLD method is one of the most widely used and most focused film preparation methods in recent years, and it has unique advantages in the preparation of ferroelectric thin films, and compared with other preparation techniques it has the advantages of strong orienta tion, high film resolution, microzone deposition, flexible tar get changer, lowtemper ature deposition, high deposition rate, arbitrary adjustment of process parameters, and highpurity thin films [22][23][24]. The process parameters of PLD include substrate temperature, reaction atmosphere pressure, laser wavelength and output power, etc.…”
Section: Laser Physicsmentioning
confidence: 99%
“…At the same time, a series of breakthroughs have been made in the preparation of ferroelectric thin films, and various film prep aration methods have been successfully used in the prep aration of ferroelectric thin films, such as sol-gel, chemical vapor dep osition, radio frequency sputtering, molecular beam epitaxy, and pulsed laser deposition (PLD) [18][19][20][21]. The PLD method is one of the most widely used and most focused film preparation methods in recent years, and it has unique advantages in the preparation of ferroelectric thin films, and compared with other preparation techniques it has the advantages of strong orienta tion, high film resolution, microzone deposition, flexible tar get changer, lowtemper ature deposition, high deposition rate, arbitrary adjustment of process parameters, and highpurity thin films [22][23][24]. The process parameters of PLD include substrate temperature, reaction atmosphere pressure, laser wavelength and output power, etc.…”
Section: Laser Physicsmentioning
confidence: 99%
“… 16 Therefore, various doping methods have been deeply studied, such as (Co, Ga)–ZnO, 17,18 (Co, Fe)–ZnS, 19 Co–ZnSe, 20,21 (Cr, Ni, Co. Ti)–ZnSe, 22 Ga 2 O 3 –In 2 O 3 , 23 Co–Ga alloys, 24 and (Co, Ni)–ZnS. 25 In terms of the form of materials, four patterns have been focused on in research: ceramic, 26,27 thin film, 28,29 nanoparticle 30 and quantum dot. 31 The structures, and ferromagnetic and optical properties of doped materials have been mainly investigated.…”
Section: Introductionmentioning
confidence: 99%