Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process

Claudel, A.; Blanquet, Elisabeth; Chaussende, Didier; Boichot, R.; Doisneau, B.; Berthomé, G.; Crisci, Alexandre; Mank, Hugues; Moisson, C.; Pique, D.; Pons, M.

doi:10.1016/j.jcrysgro.2011.09.018

Cited by 17 publications

(12 citation statements)

References 45 publications

(82 reference statements)

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“…1, is probably caused by the presence or the formation of defects (grain or sub-grain boundaries, micropipes, dislocations, stacking faults, ...). Raman analysis also showed that the surface of the AlN layer corresponds to the (0001) plane [13]. At 1600 °C and for a high growth rate of 80 µm h -1 , the surface shows smooth parts related to epitaxial growth and rough parts related to polycrystalline AlN.…”

Section: Methodsmentioning

confidence: 94%

“…H 2 is used as carrier gas. Using optimized operating conditions leading to epitaxial growth [13], AlN films were deposited at 1500-1600 °C and 10 Torr on (0001) AlN single crystal PVT substrates from the Nitride Crystals company [7] and on self-nucleated nonpolar AlN crystals grown by PVT in our labs. Non-polar AlN crystals have grown along the c-axis but the non-polar face (a-or m-plane) was still not exactly determined.…”

Section: Methodsmentioning

confidence: 99%

“…Non-polar AlN crystals have grown along the c-axis but the non-polar face (a-or m-plane) was still not exactly determined. N/Al ratio was fixed at 1.5 [13]. As-grown AlN layers were characterized by Scanning Electron Microscopy (SEM), XRay Diffraction (XRD), Atomic Force Microscopy (AFM) and Raman spectroscopy.…”

Section: Methodsmentioning

confidence: 99%

“…Despite recent advances in bulk single crystal growth by the seeded sublimation method (PVT) [6][7][8][9], the availability of large size, high quality and high purity material is still lacking to date. In recent papers, we have proposed and validated the high temperature halide chemical vapour deposition (HTCVD) as an alternative route for the deposition of thick (0001) AlN epitaxial layers on Sapphire, SiC and AlN templates [10][11][12][13]. Recent studies on the growth of polycrystalline AlN layers by HTCVD revealed that the non-polar plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) normal to the substrate seems to correspond to the most stable orientation of facetted AlN layers grown at both high temperature and high growth rate [14].…”

mentioning

confidence: 99%

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Aluminum nitride homoepitaxial growth on polar and non‐polar AlN PVT substrates by high temperature CVD (HTCVD)

Claudel¹,

Chowanek

Blanquet

et al. 2011

Phys. Status Solidi C

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Due to its wide bandgap (6.2 eV), its high thermal conductivity (3.3 WK‐1cm‐1) and high electrical resistivity (1013 Ωcm), AlN is a very expected III‐N semiconductor for applications in high power electronics (HEMTs) and optoelectronics (UV LEDs). In this work, the homoepitaxial growth of aluminum nitride on polar and non‐polar AlN PVT seeds by HTCVD is studied. From our knowledge, the AlN homoepitaxial growth by HVPE or HTCVD on polar and non‐polar bulk AlN substrates has not been reported. The potential of investigation in this new range of experiments conditions, i.e. high temperature and high growth rate, as well as the deposition of non‐polar AlN crystals (Paskova, Phys. Status Solidi B 245(6), 1011 (2008) and Schwarz and Kneissl, Phys. Status Solidi RRL 1(3), A44 (2007) [1, 2]) is very promising for epitaxial growth and could extend the field of applications (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 94%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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Aluminum nitride homoepitaxial growth on polar and non‐polar AlN PVT substrates by high temperature CVD (HTCVD)

Claudel¹,

Chowanek

Blanquet

et al. 2011

Phys. Status Solidi C

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“…To improve the crystalline quality of high temperature films, low temperature nucleation layers were deposited at 850°C on c-plane sapphire substrates (Fig. 1b) [31,32]. Thin AlN (0.5 to 5 μm) layers were directly grown at 1400 and 1500°C on these nucleation layers.…”

Section: Methodsmentioning

confidence: 99%

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Pons

Boichot

Coudurier

et al. 2013

Surface and Coatings Technology

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Growth of boron nitride films on w‐AlN (0001), 4° off‐cut 4H‐SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition

Coudurier

Chubarov

Boichot

et al. 2016

Crystal Research and Technology

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International audienceBoron Nitride is a promising group 13-group 15 compound material that exhibits various interesting properties like wide band gap, chemical stability, attractive mechanical properties and other. The growth behavior of this material has not been investigated in sufficient details to tailor properties of the resulting films. In this work we present the results on the growth of turbostratic boron nitride (t-BN) thin films at a relatively high growth rate of 3 mu m/h with the aim to investigate the potential use of boron trichloride in combination with ammonia as precursors for growth. Deposition experiments were conducted in a vertical cold wall high temperature chemical vapor deposition reactor in the temperature range 1000 degrees C-1700 degrees C depending on the substrate used. Templates of w-AlN (0001), 4 degrees off-cut 4H-SiC (0001), Cr (110) and W (110) were employed as substrates for the BN growth. As-grown BN layers were characterized by Scanning Electron Microscopy, X-Ray Diffraction, Electron Diffraction and Raman Spectroscopy. The results indicate that temperature and N/B ratio have a great influence on the crystallinity of the deposited films. For AlN and SiC substrates, a temperature of 1600 degrees C and N/B ratio in range between 3 and 7.5 were identified as the best parameters for the growth of a 2 mu m thick t-BN layer with a spacing between basal planes of about 3.36 angstrom compare to the 3.33 angstrom spacing between basal planes of hexagonal or rhombohedral BN (h-BN or r-BN). For Cr and W substrates which have a lower mismatch with h-BN (1 and 8.8 %), layers of t-BN were deposited at much lower temperature (1000 degrees C-1150 degrees C) with a spacing between basal planes of 3.5 angstrom and morphology similar to that observed on SiC substrates. We obtained t-BN layers with in plane strong disorder but out of plane orientation (c-axis normal to the surface)

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Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process

Cited by 17 publications

References 45 publications

Aluminum nitride homoepitaxial growth on polar and non‐polar AlN PVT substrates by high temperature CVD (HTCVD)

Aluminum nitride homoepitaxial growth on polar and non‐polar AlN PVT substrates by high temperature CVD (HTCVD)

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Growth of boron nitride films on w‐AlN (0001), 4° off‐cut 4H‐SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition

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