2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)
DOI: 10.1109/relphy.2002.996652
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Investigation of via-dominated multi-modal electromigration failure distributions in dual damascene Cu interconnects with a discussion of the statistical implications

Abstract: Electromigration results for a 264 sample electromigration study performed on dual damascene copper interconnects are presented and reviewed. The stress results show multi-modal failure distributions and extensive failure analysis provides possible explanations as to the failure modes. Monte-carlo 'ype simulations are used to investigate the statistical implications of using hi-modal fitting to predict reliability performance.

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Cited by 33 publications
(21 citation statements)
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“…Furthermore, Figure 6.14 seems to indicate that the distribution corresponding to DD samples deviates from the straight line in the lognormal plot for small percentage values suggesting an early failure population of about 6%. These data points are most likely due to void formation in the via, which requires only a small void to fail the line as discussed in several publications [for instance : Ogawa 2001, Ogawa 2002a, Gill 2002, Lai 2001. However, they prohibit fitting a monomodal distribution to the measured data to obtain the median and sigma values.…”
Section: Comparison Of Single and Dual Damascene Structuresmentioning
confidence: 99%
“…Furthermore, Figure 6.14 seems to indicate that the distribution corresponding to DD samples deviates from the straight line in the lognormal plot for small percentage values suggesting an early failure population of about 6%. These data points are most likely due to void formation in the via, which requires only a small void to fail the line as discussed in several publications [for instance : Ogawa 2001, Ogawa 2002a, Gill 2002, Lai 2001. However, they prohibit fitting a monomodal distribution to the measured data to obtain the median and sigma values.…”
Section: Comparison Of Single and Dual Damascene Structuresmentioning
confidence: 99%
“…In the M2 test of Cu DD structure, the reported failure sites are Site-A, Site-B, Site-C, and in the M1 test, Site-D is reported [1,[7][8][9][10][11][12][13]. A closer examination on these failure site reveals that neither current crowding nor the metallization stress state alone can explain the reason of such failure locations [14][15].…”
Section: Introductionmentioning
confidence: 98%
“…The dual damascene (DD) process for the copper interconnection system has resulted in several significant changes in the electromigration (EM) behaviors of the interconnection [1,2]. These changes are the following.…”
Section: Introductionmentioning
confidence: 99%
“…An open-wire fault is becoming a critical issue in current and future technology nodes where a total interconnection length in a single chip is in kilometer order and it continues to increase [1]. Even a single open-wire fault in the link by electromigration [22] causes fatal errors in a whole system [23].…”
Section: Introductionmentioning
confidence: 99%