Investigation of various properties of HfO 2 -TiO 2 thin film composites deposited by multi-magnetron sputtering system

Mazur, М.; Poniedziałek, Agata; Kaczmarek, Danuta; Wojcieszak, Damian; Domaradzki, J.; Gibson, D. R.

doi:10.1016/j.apsusc.2016.12.129

Cited by 19 publications

(10 citation statements)

References 55 publications

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“…It is well known that HfO 2 and TiO 2 are both indirect band gap insulators, so the mixed HfO 2 -TiO 2 film can be also regarded as an indirect allowed transition material [1,19,22,40,41,53]. The Tauc plots were used to assess the optical band gap energy of the deposited and annealed thin films, which was determined for indirect transitions [55][56][57].…”

Section: Resultsmentioning

confidence: 99%

“…The obtained E g opt values for amorphous films were equal to 3.54 eV and 3.37 eV for (Hf 0.52 Ti 0.48 )Ox and (Hf 0.29 Ti 0.71 )Ox, respectively. According to the literature [6,11,18,22,29,40,41,56], thin films based on a mixture of two oxides with significantly different values of band gap energy (with a wide and narrow energy gap) can be a material with a modified (tailored) value of this parameter. Jiang and others [6] showed that for mixed HfO 2 -TiO 2 thin films with an amorphous phase, the values of E g opt were in the range from 3.59 to 3.77 eV.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, mixed oxide thin films based on HfO 2 and TiO 2 have attracted a lot of attention due to their potential application in, e.g. metal oxide semiconductor devices, thin film transistors, optical and protective coatings or memory devices [39][40][41][42].…”

Section: Introductionmentioning

confidence: 99%

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The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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In this paper a comparison of electrical and optical properties of mixed hafnium-titanium oxides is described. Thin films were deposited with the use of the magnetron co-sputtering method. For further analysis (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71) Ox coatings, which were amorphous directly after the deposition process, were chosen,. Moreover, post-process annealing was also performed in order to compare the electrical and optical properties of amorphous and nanocrystalline thin films with the same material composition. It was found that the phase transition from amorphous to orthorhombic HfTiO 4 occurred in the case of (Hf 0.52 Ti 0.48)Ox coating at 650 °C. In turn, the phase transition to TiO 2-anatase was observed at the temperature of 600 °C in the case of (Hf 0.29 Ti 0.71)Ox thin film. The leakage current for both amorphous coatings was in the range of 10 −7-10 −8 A/cm 2. After additional annealing and phase transition, the leakage current slightly decreased for (Hf 0.29 Ti 0.71)Ox thin film, while in the case of (Hf 0.52 Ti 0.48)Ox sample the resistance switching effect was observed. The dielectric constant was equal to 24 and 25 for amorphous (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71)Ox films, respectively. However, after the phase transition it decreased to 15 for (Hf 0.52 Ti 0.48)Ox and increased to 51 for (Hf 0.29 Ti 0.71)Ox film. The results of optical studies showed that amorphous thin films were well transparent in a visible light range with an average transparency of ca. 85%. After the phase transition to HfTiO 4-orthorhombic and TiO 2-anatase, a slight decrease in the transparency level by 3% and a redshift of the cutoff wavelength was observed. Moreover, additional annealing caused small changes of the optical band gap energy, refractive index and extinction coefficient.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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“…The samples became X-ray amorphous at pressures exceeding 0.064 Pa, which was consistent with the results of the works. [40][41][42][43] At lower sputtering discharge powers, up to 180 W, the samples had an amorphous structure.…”

Section: X-ray Diffraction Crystallographic Phase Analysismentioning

confidence: 99%

Thermodynamic Analysis of Stoichiometric Composition Changes in the Ti_xO_y Films at RF Magnetron Sputtering and Modeling of Their Conductivity

Bulyarskiy

Koiva

Rudakov

et al. 2022

Physica Status Solidi (b)

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Herein, the results of experiments on the synthesis of nonstoichiometric titanium oxide films by magnetron sputtering at various partial oxygen pressures and discharge powers are presented. The thermodynamic analysis of the synthesis results is performed by minimizing the Gibbs free energy of the equilibrium thermodynamic system, which takes place in the chamber. The dependences of the concentration of the main components in the deposition chamber on the partial pressure of oxygen and the discharge power, including the concentration of synthesized titanium monoxide and dioxide, are obtained. The analysis of these dependences allows determining the conditions for the critical values of the partial pressures of oxygen at which the oxides are synthesized. The exponential dependence of the conductivity on oxygen pressure is found experimentally and explained on the basis of hopping conductivity over the states of defects on the surface of nanocrystals that form the synthesized films.

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“…Another strong indicator that provides information on the resistance of materials to plastic deformation is H 3 /E 2 [59][60][61]. This parameter shows that the contact loads needed to induce plasticity are higher in materials with larger values of H 3 /E 2 (i.e., the likelihood of plastic deformation is reduced in materials with high hardness and low modulus, with H 3 /E 2 being the controlling material parameter) [60,62,63]. The highest value of H 3 /E 2 was equal to 0.083 for the HfO 2 thin films deposited with 600 W. The results have shown that a decrease of the deposition power caused a gradual decrease of the plastic resistance parameter to ca.…”

Section: Mechanical Propertiesmentioning

confidence: 99%

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

et al. 2019

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The aim of this work is to determine the influence of medium frequency magnetron sputtering powers on the various properties of hafnium dioxide (HfO2) thin films. Microstructure observations show that an increase in the sputtering power has a significant influence on HfO2 films’ microstructure. As-deposited hafnia thin films exhibit nanocrystalline structure with a monoclinic phase, however thr rise of the sputtering power results in an increase of crystallite sizes. Atomic force microscopy investigations show that the surface of the deposited films is smooth, crack-free, and composed of visible grains. The surface roughness and the value of the water contact angle increase with the increase of the sputtering power. Measurements of the optical properties show that HfO2 coatings are transparent in the visible wavelength range. A higher sputtering power causes a decrease of an average transmittance level and a simultaneous increase of the real part of the refractive index. Nanoindentation measurements reveal that the thin film hardness and Young’s elastic modulus increase with an increase in the sputtering power. Moreover, the results of plasticity index H/E and plastic resistance parameter H3/E2 are discussed. Based on the obtained results, a correlation between the sputtering power and the structural, surface, and optical properties, as well as the hardness and Young’s elastic modulus, were determined.

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Investigation of various properties of HfO 2 -TiO 2 thin film composites deposited by multi-magnetron sputtering system

Cited by 19 publications

References 55 publications

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Thermodynamic Analysis of Stoichiometric Composition Changes in the Ti_xO_y Films at RF Magnetron Sputtering and Modeling of Their Conductivity

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

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Investigation of various properties of HfO 2 -TiO 2 thin film composites deposited by multi-magnetron sputtering system

Cited by 19 publications

References 55 publications

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Thermodynamic Analysis of Stoichiometric Composition Changes in the TixOy Films at RF Magnetron Sputtering and Modeling of Their Conductivity

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

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Thermodynamic Analysis of Stoichiometric Composition Changes in the Ti_xO_y Films at RF Magnetron Sputtering and Modeling of Their Conductivity