Investigation of trapping/detrapping mechanisms in Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; electron/hole traps and their influence on TANOS memory operations

Larcher, Luca; Padovani, Andrea; Marca, V. Della; Pavan, Paolo; Bertacchini, Alessandro

doi:10.1109/vtsa.2010.5488951

Cited by 9 publications

(11 citation statements)

References 5 publications

(7 reference statements)

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“…4. The VFB reduction observed in region I is found to be due to the electron detrapping from the alumina traps, which have a very high emission probability [36). This fast charge loss leads to VT instabilities and is a concern for the retention.…”

Section: B Blocking Dielectricmentioning

confidence: 97%

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Fundamental reliability issues of advanced charge-trapping Flash memory devices

Larcher

Padovani

2010

2010 17th IEEE International Conference on Electronics, Circuits and Systems

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The basic reliability issues of Charge Trapping (CT) Flash memory devices will be discussed from a physical perspective, highlighting the reliability implications of process and technology innovations introduced to sustain the uninterrupted device scaling down. We will focus on the reliability issues related to the charge localization inside the trapping layer and the high-K band-gap engineered stacks introduced to implement both tunnel and blocking dielectrics.We will describe the physical mechanisms responsible of reliability degradation (data retention, array disturbs, endurance), discussing briefly the issues related to ultra-scaled and vertically stacked 3D Flash memory devices.

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Section: B Blocking Dielectricmentioning

confidence: 97%

“…For this reasons, CT-NVM solutions with a BGE blocking dielectric stacks have been proposed to improve retention [34][35]. In addition, undesired charge trapping into the alumina defects can take place during PIE operations [36]. Fig.…”

Section: B Blocking Dielectricmentioning

confidence: 99%

Fundamental reliability issues of advanced charge-trapping Flash memory devices

Larcher

Padovani

2010

2010 17th IEEE International Conference on Electronics, Circuits and Systems

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“…There are reports about a fraction of the stored data residing in the Al 2 O 3 -based blocking layer. 12,[17][18][19][20] However, these works do not mention the possibility that more than one type of electron traps inside this dielectric determines the memory properties. As a consequence, care should be taken when a ten years memory window is extrapolated from short times, because the leakage could be accelerated by the participation of the slow traps.…”

Section: Effects On Tanos Performancementioning

confidence: 99%

“…12 To improve the Program/Erase (P/E) performance (erase speed and memory window closure) and data retention, Al 2 O 3 has been proposed as blocking layer, [13][14][15][16] giving rise to TaN/Al 2 O 3 /Si 3 N 4 /SiO 2 /Si (TANOS) charge-trap memories. [10][11][12][13][17][18][19][20][21][22][23][24] It has been reported that the density of as-grown electron traps in Al 2 O 3 , as other high-j dielectrics, is orders of magnitude higher than conventional SiO 2 . These traps contribute to the leakage current through the dielectric under low electric fields, due to trap-assisted-tunneling (TAT), which affects the reliability and data retention of the devices.…”

Section: Introductionmentioning

confidence: 99%

“…It was also reported that a non-negligible fraction of the charge captured during programming occurs in the electron traps located inside the Al 2 O 3 layer. 12,[17][18][19][20] The relative contribution of Al 2 O 3 trapping to the total captured charge depends strongly on the silicon nitride/alumina thicknesses ratio (t N /t Al ), reaching a significant 25% when t N /t Al ¼ 0. 27.…”

Section: Introductionmentioning

confidence: 99%

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Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Salomone

Lipovetzky

Carbonetto

et al. 2013

Journal of Applied Physics

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Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm−3 and 1.6 × 1018 cm−3, respectively.

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