Investigation of transient thermal dissipation in thinned LSI for advanced packaging

Abstract

Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal characteristics caused by the steep thermal gradient on LSIs with thinned base silicon is a concern. To manage a thermal environment in advanced packages, thermal characteristics of the thinned LSIs must be clarified. In this study, static and dynamic thermal dissipations were analyzed before and after thinning silicon to determine variations of thermal characteristics in thinned LSI. Measurement results revealed that silicon thinning affects dynamic thermal characteristics as well as static one. The transient variations of thermal characteristics of thinned LSI are precisely verified by analysis using an equivalent model based on the thermal network method. The results of analysis suggest that transient thermal characteristics can be easily estimated by employing the equivalent model.