Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures

Azizian‐Kalandaragh, Yashar; Yücedağ, İ̇brahim; Demir, Gülçin Ersöz; Altındal, Ş.

doi:10.1016/j.molstruc.2020.129325

Cited by 30 publications

(14 citation statements)

References 45 publications

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“…3a it can be clearly seen that virgin PVA (curve "a") has no absorption in the visible region whereas in case of PVA embedded with CdS NPs an absorption peak at about 450 nm is noticed and with increase in molar concentration of CdS NPs a red shift is observed which suggests that hydrogen bonding occur among Cd ions and hydroxyl group of polymer matrix. 23 In PVA because of n→π* transitions absorption peak at about 230 nm is observed 21 and this band shifts to higher wavelength as there is increment in amount of CdS NPs in nanocomposite. As a consequence of this, changes in band gap are observed.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, such studies may help to understands the changes in optical, PL, structural, thermal and electrical properties of PVA after embedding CdS nanoparticles and further with UV exposure induced changes. To utilize these nanocomposite films for various optoelectronic applications like LEDs, 20 solar cell, 21 thin film transistors 22 etc. we would have right information about how with varying concentration and varying UV exposure time these nanocomposite behaves which is very crucial for any optical device.…”

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confidence: 99%

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Synergic Effect of CdS Nano Additives and UV Exposure on Properties of PVA/CdS Nanocomposite

Nain

Chahal

Dahiya

et al. 2023

ECS J. Solid State Sci. Technol.

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PVA/CdS nanocomposites with varying amounts of CdS NPs in PVA were synthesized and subjected to UV irradiation. An absorption peak around 450 nm indicates the presence of CdS NPs in PVA. UV irradiation causes red shift in wavelength in absorption spectra, suggesting an increase in particle size after UV exposure. A decrease in transmittance of PVA after embedding NPs and further with UV exposure suggests that these can be used for UV-blocking devices. The band gap of PVA decreased with an increase in NPs and UV exposure time. An increase in the refractive index of PVA after embedding CdS NPs was observed, further increasing with increasing concentration of NPs and with increase of UV exposure. Structural induced changes in PVA after embedding NPs and with UV exposure were analyzed by Fourier transform infra-red spectroscopy. Field-emission scanning electron microscopy and energy-dispersive spectroscopy analysis confirmed the presence and distribution of NPs. Photoluminescence spectrum exhibits quantum confinement effect of CdS NPs embedded in polymer matrix. The thermal nature of nanocomposite films was investigated by DSC and TG. Dependence of electrical parameters on concentration of NPs and UV exposure time were studied and explained on the basis of formation charge-transfer complexes inside matrix.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Synergic Effect of CdS Nano Additives and UV Exposure on Properties of PVA/CdS Nanocomposite

Nain

Chahal

Dahiya

et al. 2023

ECS J. Solid State Sci. Technol.

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“…Electric modulus.-The electric modulus is used to analyzed the electrical relaxation mechanism in dielectric material. Complex electric modulus (M * ) with the real (M″) and imaginary (M″) components is given by, [34][35][36][37]…”

Section: Resultsmentioning

confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.

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“…M* provides information about polarization mechanisms in the material and electrical transport process parameters such as carrier hopping rate and conductivity relaxation time. M* is calculated using ε ' and ε " and is given as follows [35,36]:…”

Section: Resultsmentioning

confidence: 99%

The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range

Sevgili¹

2021

Turk J Phys

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The Al/Mg 2 Si/p-Si Schottky diode was fabricated using spin coating. The real ( ε ′ ) and imaginary ( ε ′ ′ ) components of complex dielectric ( ε *), the real (M ′ ) and imaginary (M ′ ′ ) components of complex electric modulus (M*) and AC electrical conductivity ( σ AC ) of the fabricated Al/Mg 2 Si/p-Si Schottky diode (SD) were examined by using the impedance spectroscopy (IS) measurements in a wide frequency range of 1 kHz-1 MHz. The ε ′ and ε ′ ′ were obtained using the value of measured capacitance and conductance while the values of dielectric loss tangent (tan δ , M ′ , M ′ ′ and σ AC were obtained using the value of ε ′ and ε ′ ′ . While the values of ε ′ , ε ′ ′ and tan δ are almost independent of the frequency in the inversion and accumulation region, their value changes with the frequency, especially in the depletion region. The σAC was examined depending on the frequency and it was seen that its value increased with increasing frequency especially in depletion and accumulation region. The experimental results showed that the Mg 2 Si can be used instead of conventionally used dielectric materials (SnO 2 , SiO 2 ).

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Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures

Cited by 30 publications

References 45 publications

Synergic Effect of CdS Nano Additives and UV Exposure on Properties of PVA/CdS Nanocomposite

Synergic Effect of CdS Nano Additives and UV Exposure on Properties of PVA/CdS Nanocomposite

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range

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