Investigation of the TiN/photoresist interface degradation during a wet etch

et al. 2014

SSP

Chemical etching is still preferred to plasma etching in numerous integrated circuits manufacturing steps. Indeed, it enables a better surface smoothness control, which is critical to obtain sufficient carrier mobility. During these steps, photoresist patterns protect underlying materials from etching. It is therefore mandatory to: 1) guarantee photoresist adhesion and keep patterns from being etched away; and 2) prevent surface degradation from etchants penetration down to the photoresist / material interface. To avoid this latter phenomenon, it is therefore crucial to know if etchants penetrate into the photoresist, and at which diffusion rate.

“…The interface modification by etchant vertical penetration has already been evidenced in a previous work [1]. We focus here on the etchants' diffusion kinetics determination.…”

Section: Introductionmentioning

confidence: 71%

Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch

Foucaud

Rochat

et al. 2014

SSP

“…First, two different non-destructive acoustic methods have been successfully able to quantify such process window [8,9]. AFM (Atomic Force microscopy) is also another opportunity [10]. This method is hereby used to study a 300 nm thick resist compatibility with various wet etchants on a spin dry single wafer tool.…”

Section: Resultsmentioning

confidence: 99%

Wet Etchants Penetration through Photoresist during Wet Patterning

2018

SSP

Self Cite

“…During this soft mask patterning, the gate oxide under the resist can be degraded by two different mechanisms: either a lateral wet etchant infiltration at the PR(Photo resist) / gate oxide interface [2], or a vertical diffusion of chemicals down to this same interface. Diffusion kinetics and characterization have already been proposed [3] [4]. A deeper understanding of the gate oxide degradation by HF based chemicals infiltration through the resist is hereby discussed.…”

Section: Introductionmentioning

confidence: 95%

Chemical Infiltration through Deep UV Photoresist

Neyens

2016

SSP

Self Cite

Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From dies to dies generation, an optical performance improvement is required, hence an evolution with thinner and thinner positive resist. This makes these latter more sensitive to wet chemical etchant through the polymer, reducing their protection of the underneath material. Following characterizations enable a clear understanding of BHF (Buffered HF) benefits versus diluted HF during a gate oxide definition.