2012
DOI: 10.1016/j.nimb.2012.09.002
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Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method

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Cited by 3 publications
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“…They have observed that after annealing, the optical band gap decreases gradually for the crystallized films while the refractive index increases, and this behavior can be attributed to the transformation from amorphous to crystalline phase and explained in terms of dangling bond model. The thermal annealing effect on the defects structure in γ-irradiated Cd-Zn-Te crystals by photoluminescence method have been explained by Nasieka et al [141]. They have observed that the amplitude of donor bound exciton lines increases after thermal annealing explained by the reconstruction of the initial donor defect structure and the reconstruction process is caused by the transmission of the additional thermal energy which leads to the substantial movement of the radiation induced vacancies and interstitials ions with their further annihilation.…”
Section: Structuralmentioning
confidence: 97%
“…They have observed that after annealing, the optical band gap decreases gradually for the crystallized films while the refractive index increases, and this behavior can be attributed to the transformation from amorphous to crystalline phase and explained in terms of dangling bond model. The thermal annealing effect on the defects structure in γ-irradiated Cd-Zn-Te crystals by photoluminescence method have been explained by Nasieka et al [141]. They have observed that the amplitude of donor bound exciton lines increases after thermal annealing explained by the reconstruction of the initial donor defect structure and the reconstruction process is caused by the transmission of the additional thermal energy which leads to the substantial movement of the radiation induced vacancies and interstitials ions with their further annihilation.…”
Section: Structuralmentioning
confidence: 97%