Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

Acquisition and Research of the p-3C-SiC Epitaxial Layers Based on the 6H-SiC Semi-Insulating Substrates

“…It was theoretically proved that the heteropolytypic structures based on SiC are more perspective, for example, for HEMT transistors manufacturing than compound III-N (Polyakov and Schweirz, 2005). There is a number of experimental works where heteropolytypic structures were produced using both the method of sublimation epitaxy (Lebedev et al, 2001a) and the CVD method (Chandrashekhar, 2007;Li et al, 2009). …”

On the possibility of the experimental determination of spontaneous polarization for silicon carbide polytypes

“…Another possible way to evaluate the SP field is by comparing the contact potential difference U d in p-n junctions formed in NH/3C SiC HJs in which the C and S planes are taken as surfaces in contact with the 3C polytype. It has been shown previously that an abrupt p-n HJ can be produced by the sublimation growth of a p type 3C SiC layer on a 6H SiC substrate [18]. It is known that, for an abrupt p-n junction, the dependence of the barrier capacitance C on the applied voltage U is linear in the (1/C 2 , U) coordinates [19].…”

Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure

“…To obtain a two-dimensional electron gas ͑2DEG͒, 3C-SiC must be grown on C-face hexagonal SiC. [4][5][6][7] The band structure 8 of 3C-SiC and 6H-SiC is shown in Fig. 1.…”