Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure

Lu, Jie; Chandrashekhar, M. V. S.; Parks, J. J.; Ralph, D. C.; Spencer, Michael G.

doi:10.1063/1.3126447

Cited by 16 publications

(10 citation statements)

References 13 publications

(17 reference statements)

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“…A two-dimensional electron gas (2DEG) is one of the key parts for the application of MOSFETs and high electron mobility transistors (HEMTs). Quantum confinement and coherence effect in a 2DEG has been achieved as well in a C-face 3C/6H-SiC hetero-structure [8]. This reveals the potential of the C-face 3C-SiC for the fabrication of MOSFETs and HEMTs.…”

Section: Potential Applications Of 3c-sicmentioning

confidence: 58%

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Shi

2019

Linköping Studies in Science and Technology. Dissertations

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Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H-or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si-C bilayers along the c-axis crystal direction. Among different polytypes of SiC, 3C-SiC has attracted specific interest due to its prominent properties such as high electron mobility and low interface trap density in MOSFET devices. Moreover, with a relatively small bandgap of 2.36 eV and suitable conduction and valence band positions, 3C-SiC has also been considered as a promising material for solar water splitting application, which provides a completely renewable approach to convert solar energy into storable hydrogen fuel. However, the growth of high-quality 3C-SiC remains a great challenge for decades. Graphene, a single layer of sp 2-bonded carbon atoms, has shown outstanding electronic properties and becomes the most promising candidate for next-generation electronic and optoelectronic devices. Epitaxial growth of graphene on SiC substrates by sublimation of Si from SiC provides a feasible route to fabricate wafer-scale device-quality graphene. The most advantage of this method is that a variety of devices can be processed directly on graphene/SiC without any transfer process, which is needed in the case of graphene produced by exfoliation or CVD on metals. During past years, the growth of monolayer (ML) graphene on hexagonal SiC (6H-SiC, 4H-SiC) substrates has been extensively studied. However, it is challenging to grow large-area and uniform multilayer graphene on hexagonal SiC substrates due to the stepbunching issue during the sublimation growth. Multilayer graphene has recently attracted great interest due to its tunable electronic properties for various electronic and optoelectronic applications. It has been shown that the electronic properties of multilayer graphene are strongly influenced by its stacking sequence. In particular, the rhombohedral stacking sequence (ABC stacking) has shown its potential to introduce a flat band energy dispersion at the K points of the Brillouin zone, which would result in many exotic phases of matter such as superconductivity. Among various SiC polytypes, 3C-SiC is predicted to be the most suitable substrate for the epitaxial growth of rhombohedral multilayer graphene. This thesis work mainly covers the sublimation growth of high-quality Si-face and C-face 3C-SiC on off-oriented 4H-SiC, exploring the proper parameter window for the growth of

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Section: Potential Applications Of 3c-sicmentioning

confidence: 58%

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Shi

2019

Linköping Studies in Science and Technology. Dissertations

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“…The doping of the barrier layer yields a noticeable enhancement of the 2DEG density only for the 4H/3C SiC structure, e.g. [4][5][6][7]. SiC is a material of choice for high temperature and high power applications due to its superior material as well as electrical properties over Si and GaAs and the availability of different polytypes in SiC.…”

Section: Practical Application Fields For Polytypic Heterojunctionsmentioning

confidence: 99%

Polytypic heterojunctions for wide bandgap semiconductor materials

Shenkin¹,

Korolkov²,

Rang³

et al. 2015

Materials Characterisation VII

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The bonding of crystallic semiconductor structures for getting polytypic heterojunctions on the basis of wide band gap semiconductor materials has considerably increased. The direct wafer bonding technology for the creation of polytypic heterojunctions (e.g. silicon carbide polytypes like 4H-SiC, 6H-SiC, 3C-SiC) gives an advantage in obtaining heterojunctions on the basis of different polytypes improves the electrical and physical properties of devices without lattice mismatch problems. The bonding of SiC wafers is an extremely challenging process even under ideal surface conditions. The hardness and inertness of SiC renders possesses a huge influence for surface preparation. Such parameters as roughness, flatness, waviness, and an extremely important aspect like cleanliness of surfaces have to be tightly controlled.This paper shows a state-of-the-art-today's situation: the physical background and surface preparation problems before the direct bonding; the technological possibilities and possible practical solutions.

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“…We note that by changing the polytypes forming such junctions, the conduction band offset can be controlled, leading to controllable quantum well depths [2]. These types of heterostructures have been shown to trap two-dimensional electron gases (2DEG) and two-dimensional hole gases (2DHG) in 3C-/4H-and 3C-/6H-SiC heterojunctions on the carbon and silicon faces, respectively [34][35][36]. Similar heterostructures based on III-V materials, such as GaN/AlGaN, exhibit suitable performance for high frequency and high power applications through the use of polarization doped high-electron mobility transistors (HEMTs) [37,38].…”

Section: Introductionmentioning

confidence: 99%

Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

et al. 2017

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Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as a transparent, conductive, and chemically responsive layer that is mated to a wide-bandgap semiconductor with large breakdown voltage. Recent advances in control of epitaxial growth and doping of SiC epilayers have increased the range of electronic device architectures that are accessible with this system. In particular, a recently-introduced Schottky-emitter bipolar phototransistor (SEPT) based on an epitaxial graphene (EG) emitter grown on a p-SiC base epilayer has been found to exhibit a maximum common emitter current gain of 113 and a UV responsivity of 7.1 A W−1. The behavior of this device, formed on an n+-SiC substrate that serves as the collector, was attributed to a very large minority carrier injection efficiency at the EG/p-SiC Schottky contact. This large minority carrier injection efficiency is in turn related to the large built-in potential found at a EG/p-SiC Schottky junction. The high performance of this device makes it critically important to analyze the sub bandgap visible response of the device, which provides information on impurity states and polytype inclusions in the crystal. Here, we employ scanning photocurrent microscopy (SPCM) with sub-bandgap light as well as a variety of other techniques to clearly demonstrate a localized response based on the graphene transparent electrode and an approximately 1000-fold difference in responsivity between 365 nm and 444 nm excitation. A stacking fault propagating from the substrate/epilayer interface, assigned as a single layer of the 8H-SiC polytype within the 4H-SiC matrix, is found to locally increase the photocurrent substantially. The discovery of this polytype heterojunction opens the potential for further development of heteropolytype devices based on the SEPT architecture.

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Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure

Cited by 16 publications

References 13 publications

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Polytypic heterojunctions for wide bandgap semiconductor materials

Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

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