Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

Wang, Fang-Hsing; Chen, Kun-Neng; Hsu, Chao-Ming; Liu, Min-Chu; Yang, Cheng‐Fu

doi:10.3390/nano6050088

Cited by 29 publications

(9 citation statements)

References 28 publications

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“…443.1 eV), Sn 3d (496.9 eV), Zn 2p (1043.1 and 1020.1 eV), Ga 3p (1116.3 eV), and O 1s (529 eV) elements were observed as shown in Figure 3(b-f). The binding energy of In 3d, Sn 3d, O 1s peaks of ITO film and Zn 2p, Ga 3d, O 1s of GZO film were similar to those of the previously reported ITO and GZO films [39,40]. The binding energy of In 3d 5/2 at 443.1 eV measured from graded region shown in Figure 3(b) can be attributed to the In 3+ bonding state from In 2 O 3 [41].…”

Section: Resultssupporting

confidence: 86%

ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells

Seok

Ali

Seo

et al. 2019

Science and Technology of Advanced Materials

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Ga-doped ZnO (GZO)-graded layer, facilitating electron extraction from electron transport layer, was integrated on the surface of transparent indium tin oxide (ITO) cathode by using graded sputtering technique to improve the performance of planar n-i-p perovskite solar cells (PSCs). The thickness of graded GZO layer was controlled to optimize GZO-indium tin oxide (ITO) combined electrode for planar n-i-p PSCs. At optimized graded thickness of 15 nm, the GZO-ITO combined electrode showed an optical transmittance of 95%, a resistivity of 2.3 × 10 −4 Ohm cm, a sheet resistance of 15.6 Ohm/square, and work function of 4.23 eV, which is well matched with the 4.0-eV lowest unoccupied molecular orbital of [6,6]-phenyl-C 61-butyric acid methyl ester. Owing to enhanced extraction of electron by the graded GZO, the n-i-p PSC with GZO-ITO combined electrode showed higher power conversion efficiency (PCE) of 9.67% than the PCE (5.25%) of PSC with only ITO electrode without GZO-graded layer. In addition, the GZO integrated-ITO electrode acts as transparent electrode and electron extraction layer simultaneously due to graded mixing of the GZO at the surface region of ITO electrode.

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Section: Resultssupporting

confidence: 86%

ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells

Seok

Ali

Seo

et al. 2019

Science and Technology of Advanced Materials

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“…This may occur since an Sn impurity can play the part of effective donor-generating free carriers [ 47 , 48 ]. Sn doping increases the concentration of free carriers in the films, which results in a diminution in their refractive index [ 49 ]. At a 50% content of Sn, the refractive of the film is the highest compared with the others, which is an abnormal phenomenon.…”

Section: Resultsmentioning

confidence: 99%

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

Shen

et al. 2022

Nanomaterials

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In this work, the atomic level doping of Sn into Ga2O3 films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical properties, energy band alignment, and electrical properties for various configurations of the Sn-doped Ga2O3 films. The results indicated that all the films have high transparency with an average transmittance of above 90% over ultraviolet and visible light wavelengths. X-ray reflectivity and spectroscopic ellipsometry measurement indicated that the Sn doping level affects the density, refractive index, and extinction coefficient. In particular, the chemical microstructure and energy band structure for the Sn-doped Ga2O3 films were analyzed and discussed in detail. With an increase in the Sn content, the ratio of Sn–O bonding increases, but by contrast, the proportion of the oxygen vacancies decreases. The reduction in the oxygen vacancy content leads to an increase in the valence band maximum, but the energy bandgap decreases from 4.73 to 4.31 eV. Moreover, with the increase in Sn content, the breakdown mode transformed the hard breakdown into the soft breakdown. The C-V characteristics proved that the Sn-doped Ga2O3 films have large permittivity. These studies offer a foundation and a systematical analysis for assisting the design and application of Ga2O3 film-based transparent devices.

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“…When the pretreatment times were 30 s and 120 s, the carrier concentrations were 2.242 × 10 20 cm −3 and 2.152 × 10 20 cm −3 , respectively, corresponding to higher E g values of 3.539 and 3.518 eV. Another factor is that the PI substrate pretreated for 30 s had the largest crystallite sizes and lowest FWHM value, and therefore fewer defects [ 15 ], so the FZO films on this substrate had a higher E g value.…”

Section: Resultsmentioning

confidence: 99%

Using Oxygen Plasma Pretreatment to Enhance the Properties of F-Doped ZnO Films Prepared on Polyimide Substrates

et al. 2018

Self Cite

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In this study, a radio frequency magnetron sputtering process was used to deposit F-doped ZnO (FZO) films on polyimide (PI) substrates. The thermal expansion effect of PI substrates induces distortion and bending, causing FZO films to peel and their electrical properties and crystallinity to deteriorate. To address these shortcomings, oxygen (O2) plasma was used to pretreat the surface of PI substrates using a plasma-enhanced chemical vapor deposition system before the FZO films were deposited. The effects of O2 plasma pretreatment time on the surface water contact angle, surface morphologies, and optical properties of the PI substrates were investigated. As the pretreatment time increased, so did the roughness of the PI substrates. After the FZO films had been deposited on the PI substrates, variations in the surface morphologies, crystalline structure, composition, electrical properties, and optical properties were investigated as a function of the O2 plasma pretreatment time. When this was 30 s, the FZO films had optimal optical and electrical properties. The resistivity was 3.153 × 10−3 Ω-cm, and the transmittance ratios of all films were greater than 90%. The X-ray photoelectron spectroscopy spectra of the FZO films, particularly the peaks for O1s, Zn 2p1/2, and Zn 2p3/2, were determined for films with O2 plasma pretreatment times of 0 and 30 s. Finally, a HCl solution was used to etch the surfaces of the deposited FZO films, and silicon-based thin-film solar cells were fabricated on the FZO/PI substrates. The effect of O2-plasma pretreatment time on the properties of the fabricated solar cells is thoroughly discussed.

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Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

Cited by 29 publications

References 28 publications

ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells

ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

Using Oxygen Plasma Pretreatment to Enhance the Properties of F-Doped ZnO Films Prepared on Polyimide Substrates

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