Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering

Bała, W.; Drozdowski, M.; Kozielski, M.

doi:10.12693/aphyspola.80.723

Cited by 4 publications

(2 citation statements)

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“…7) The simple and exact analytical dispersion relations obtained allow direct line-shape analysis of the experimental spectra and as a result permit high-accuracy non-destructive and contactless optical characterization of the electrical transport properties of semiconductors. 7) The unique approach since that time has been successfully applied to almost all of polar semiconductor compounds 8,9) including recently employed for GaN and related com-pounds [11][12][13] and currently, become a key metrology standard. The problem becomes more challenging as the device features shrink and tolerances become tighter, to the extent of their physical limits.…”

Section: Introductionmentioning

confidence: 99%

Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures

Bayramov

Irmer

Toporov

et al. 2011

Jpn. J. Appl. Phys.

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We show results of our systematic investigation by means of quasi-elastic and inelastic laser light scattering (QEILS) of electron- and hole–phonon interactions as well as charge- and spin-density scattering mechanisms from hole gas fluctuations including their overlapping with phonon features by using near infrared excitation of doped bulk p-GaAs and self-assembled InAs/GaAs quantum dot (QD) structures. Additionally, results of our study of CdS and CdSe/ZnS QDs, multi-functionalized by peptides possessing strict affinity to integrins of MDA-MB-435 cancer cells are also presented.

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Section: Introductionmentioning

confidence: 99%

Structural, Optical, and Electrical Properties of Semiconductor Compounds Studied by Means of Inelastic Light Scattering from Phonon, Electron, and Coupled Electron–Phonon Excitations: From Bulk to Nanoscale Structures

Bayramov

Irmer

Toporov

et al. 2011

Jpn. J. Appl. Phys.

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“…Ηv, 61.70.Wp Due to the lattice mismatch between the epilayer and the substrate in ZnSe/ZnO stuctures, it is cucial to know the limiting conditions leading to a pseudomorphic growth by the accommodation of the biaxial strains caused by difference in lattice constants and/or thermal expansion coefficients of the materials forming the heterostucture [1,2]. Moreover, hydrostatic pressure decreases the lattice constant of the materials.…”

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confidence: 99%

Exciton Electroluminescence of ZnSe/ZnO Structures under Biaxial Stress

et al. 1992

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The strained ZnSe/ZnO structures grown on (111) ZnSe crystals by plasma oxidation was investigated by electro-and photoluminescence methods. The lines of heavy and light hole excitons under biaxial compressive stress are measured as a function of the temperature.PACS numbers: 78.30. Ηv, 61.70.Wp Due to the lattice mismatch between the epilayer and the substrate in ZnSe/ZnO stuctures, it is cucial to know the limiting conditions leading to a pseudomorphic growth by the accommodation of the biaxial strains caused by difference in lattice constants and/or thermal expansion coefficients of the materials forming the heterostucture [1,2]. Moreover, hydrostatic pressure decreases the lattice constant of the materials. The difference in the compressibility of ZnO from that of ZnSe generates under hydrostatic pressure a tensile strain which progressively compensates the lattice mismatch induced compressive strain. The valence band at the Γ point of the unstrained ZnSe crystals consists of a fourfold degenerate P3/ 2 valence band (J = 3/2, m = ±3/2, m = ±1/2). Under biaxial compressive or tensile stress this valence band splits into a light-hole (J = 3/2, mj = f 1/2) and a heavy-hole (j = 3/2, m = ±3/2) branches [3][4][5]. The trend in II-VI compounds is that the materials have a larger negative deformation potential as their lattice constants get smaller. It may be suspected that the deformation potential will get more negative as we apply pressure, since the average lattice constant gets smaller [3].In addition, a situation similar to the pressure induced biaxial strain can occur for heterostructures where the thermal expansion coefficients for materials vary greatly. The lattice constants of constituent materials at each temperature must adjust each other.In this paper, we present for the first time a study of the exciton emission of the strained ZnSe/ZnO stuctures as a function of the biaxial compressive or tensile stress and temperature using photo and electroluminescence methods. These (896)

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