2012
DOI: 10.1140/epjd/e2012-20470-5
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Investigation of the SiC thin films synthetized by Thermionic Vacuum Arc method (TVA)

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Cited by 29 publications
(15 citation statements)
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“…Because the discharge sustaining gas is just the evaporating atoms in a vacuum without any other inert buffer gas, the thin film deposition is carried out in high purity conditions. More details are presented elsewhere [30][31][32]. In this way, it is possible to meaningfully refine the quality of the surfaces coated with different materials.…”
Section: Methodsmentioning
confidence: 99%
“…Because the discharge sustaining gas is just the evaporating atoms in a vacuum without any other inert buffer gas, the thin film deposition is carried out in high purity conditions. More details are presented elsewhere [30][31][32]. In this way, it is possible to meaningfully refine the quality of the surfaces coated with different materials.…”
Section: Methodsmentioning
confidence: 99%
“…In this study, we synthesized titanium-based nanocomposite layers-titanium and silver (TiAg) and titanium and carbon (TiC)-on glass, on a silicon (Si) wafer, and a special substrate with a great interest for industrial applications, OLC45-meaning high-quality stainless steel with 0.45% carbon-using the Thermionic Vacuum Arc (TVA) method. This procedure combines the advantages associated with vacuum techniques and the relatively high rate of deposition, especially ease in tailoring film composition by controlling input arc power [12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, SiC is recognized as a wide-bandgap semiconductor which can be doped both n-and p-type and it allows a natural oxide to be grown on its surface for the purpose of certain device fabrication [8]. Si -C and SiC thin films can be obtained by various methods such as Chemical Vapor Deposition (CVD) [9,10], Pack cementation [11][12][13], Electrophoretic deposition [14], Molecular Beam Epitaxy (MBE), Plasma spray [15] or Thermionic Vacuum Arc (TVA) method [16,17]. The purpose of this paper is to synthesize Nitrogen doped Silicon Carbide nanostructures by TVA method.…”
Section: Introductionmentioning
confidence: 99%