Structural and electrical properties of N doped SiC nanostructures obtained by TVA method

Abstract

Ionized nitrogen doped Si-C thin films at 200°C substrate temperature were obtained by Thermionic Vacuum Arc (TVA) method. To increase the energy of N, C and Si ions, -400V, -600V and -1000V negative bias voltages was applied on the substrate. The 400nm, 600nm and 1000nm N-SiC coatings on glass was deposed. To characterize the structure of as-prepared N-SiC coatings, Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM), X-Ray and Photoelectron Spectroscopy (XPS) techniques was performed.Electrical conductivity was measured comparing the potential drop on the structure with the potential drop on a series standard resistance in a constant current mode. To justify the dependence of measured electrical conductivity by the temperature, we assume a thermally activated electrical transport mechanism.

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

“…Characterization of ternary C-Si-Al nanocomposite thin films obtained by TVA presented in [122]. In ref [123][124][125] were studied the nitrogen-doped silicon carbide nanostructures/protective coatings obtained by TVA method. In ref.…”