Investigation of the reliability of 4H–SiC MOS devices for high temperature applications

Le-Huu, Martin; Schmitt, H.; Noll, Stefan; Grieb, Michael; Schrey, Frederik F.; Bauer, Anton J.; Frey, L.; Ryssel, H.

doi:10.1016/j.microrel.2011.03.015

Cited by 39 publications

(25 citation statements)

References 27 publications

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“…On the basis of the slope of the Arrhenius plots, the trap level that leads to a temperature dependence on the PF emission current was estimated to be 1.2 eV from the conduction band edge of SiO 2 . This value agrees well with the values reported by Le-Huu et al 14 and approximately corresponds to the theoretical value for the C-C pair defect level with charge states q ¼ À2 in SiO 2 (1.3 eV) and the oxygen vacancy defect level with charge states q ¼ À1 in SiO 2 (1.1 eV). 22 This implies that the leakage current carrier in the SiO 2 /4H-SiC systems via a thermal excitation process originate from C-C pair defects and/or oxygen vacancy defects.…”

Section: Resultssupporting

confidence: 92%

“…We estimated the tunneling current at various temperatures by using the following equations. 14,18,19 The tunneling current at energy E, I(E), is proportional to the electron density of the energy distribution, n(E), and the energy-dependent tunneling probability, T c (E), which is described as…”

Section: Resultsmentioning

confidence: 99%

“…[10][11][12][13] Several authors have shown that the leakage current in SiO 2 /SiC systems increases with temperature. [13][14][15] Le-Huu et al have proposed that the Poole-Frenkel (PF) current dominates the leakage current above room temperature. 14 However, the individual contributions of FN tunneling and the PF current have not been elucidated.…”

Section: Introductionmentioning

confidence: 99%

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Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Sometani

Okamoto

Harada

et al. 2015

Journal of Applied Physics

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The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Sometani

Okamoto

Harada

et al. 2015

Journal of Applied Physics

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“…The fact that ε and ε values are greater at low frequencies could be attributed to the presence of a possible interface polarization mechanism, since interface states cannot follow the AC signal at high frequencies and do not contribute to the capacitance, due to the lack of any interface polarization mechanism [21]. In general, polarization mechanisms at low frequencies are affected by electronic, ionic, dipolar and interface or surface polarization distribution [24,25]. The high values of ε and ε investigated at low frequencies may be attributed to interfacial Maxwell-Wagner polarization [26] and space charge polarization [27].…”

Section: Frequency Dependence Of Dielectric Propertiesmentioning

confidence: 99%

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

et al. 2016

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An (Au/Ti)/Al2O3/n-GaAs structure with thin (30 Å) interfacial oxide layer (Al2O3), formed by atomic layer deposition technique is fabricated to investigate both frequency and applied bias voltage dependences of real and imaginary parts of dielectric constant (ε and ε ) and electric modulus (M and M ), loss tangent tan δ and ac electrical conductivity σAC in a wide frequency range from 1000 Hz to 1 MHz at room temperature. The dielectric properties of the (Au/Ti)/Al2O3/n-GaAs metal-insulator-semiconductor structure are obtained using the forward and reverse bias capacitance-voltage (C-V ) and conductance-voltage (G/ω-V ) measurements in the applied bias voltage range from -4 V to +4 V, at room temperature. Experimental results show that the dielectric parameters were strongly frequency and voltage dependent. For each frequency the (C-V ) plots show a peak and the change in frequency has effect on both the intensity and position of the peak. ε , ε and tan δ decrease with increasing frequency, whereas σAC increases with increasing frequency at applied bias voltage. M increases with the increasing frequency and reaches a maximum. M shows a peak and peak position shifts to higher frequency with increasing applied voltage. It can be concluded that the ε , ε , tan δ, M , M and σAC values of the (Au/Ti)/Al2O3/ n-GaAs structure are strongly dependent on both the frequency and applied bias voltage especially in the depletion and accumulation region. Also, the results can be deduced to imply that the interfacial polarization is easier at low frequencies, therefore contributing to the deviation of dielectric properties and AC electrical conductivity of (Au/Ti)/Al2O3/n-GaAs structure.

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“…Si/SiO 2 interfaces have been largely studied and the barrier height dependence on temperature has been discussed in many papers [5,17,18]. Much fewer papers address the 4H-SiC/SiO 2 interfaces, and they only investigate it over a limited temperature range [14,13,12,10,19]. Agarwal et al (1997) [14] extracted Φ b at 298, 423 and 598 K for MOS capacitors fabricated with 4H-and 6H-SiC polytypes from current-voltage (IV) measurements on the gate.…”

Section: Introductionmentioning

confidence: 99%

Extraction of the 4H-SiC/SiO₂Barrier Height Over Temperature

Aviñó-Salvadó

Asllani

Buttay

et al. 2020

IEEE Trans. Electron Devices

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The behaviour of the barrier height of the SiC/SiO 2 interface has been investigated over a wide temperature range, from 173 to 523 K. These data complement literature, providing a better knowledge of this parameter, which was studied only over a more restricted temperature range, and never before for low temperatures. It is highlighted that measured samples exhibit a barrier height temperature dependence very near to the theoretical one (≈−0.7 meV K −1). Beyond 473 K the barrier height seems to drop faster for some samples, reaching ≈−1.4 meV K −1. Should this faster decreasing rate be maintained for higher temperatures, it could limit 4H-SiC MOSFETs performances or reliability for high temperature applications. It is expected that the data provided here will allow for a more accurate modelling of the gate current and of the charge injection in the oxide layer of power MOSFETs, leading to more reliable predictions of the oxide lifetime for 4H-SiC MOSFETs.

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Investigation of the reliability of 4H–SiC MOS devices for high temperature applications

Cited by 39 publications

References 27 publications

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

Extraction of the 4H-SiC/SiO₂Barrier Height Over Temperature

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Investigation of the reliability of 4H–SiC MOS devices for high temperature applications

Cited by 39 publications

References 27 publications

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature

Extraction of the 4H-SiC/SiO2Barrier Height Over Temperature

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Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

Extraction of the 4H-SiC/SiO₂Barrier Height Over Temperature